・名古屋工業大学学術機関リポジトリは、名古屋工業大学内で生産された学術情報を電子的に収集・保存・発信するシステムです。 ・論文の著作権は、著者または出版社が保持しています。著作権法で定める権利制限規定を超える利用については、著作権者に許諾を得てください。 ・著者版フラグに「author」と記載された論文は、著者原稿となります。実際の出版社版とは、レイアウト、字句校正レベルの異同がある場合もあります。 ・Nagoya Institute of Technology Repository Sytem is built to collect, archive and offer electronically the academic information produced by Nagoya Institute of Technology. ・The copyright and related rights of the article are held by authors or publishers. The copyright owners' consents must be required to use it over the curtailment of copyrights. ・Textversion "Author " means the article is author's version. Author version may have some difference in layouts and wordings form publisher version.
MOVPE Growth of Thick Single Crystal CdZnTe Epitaxial Layers on Si Substrate for Nuclear Radiation Detector Development
利用統計を見る
File / Name
License
本文_fulltext
(c)2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
MOVPE Growth of Thick Single Crystal CdZnTe Epitaxial Layers on Si Substrate for Nuclear Radiation Detector Development
本文_fulltext
(338.36KB)
