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Spectral hole burning quantum efficiency and electron traps in Sm21-ion-doped aluminosilicate glasses
https://nitech.repo.nii.ac.jp/records/4699
https://nitech.repo.nii.ac.jp/records/46991a53bd20-1478-490c-89cb-1ffb858d822a
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文_fulltext (191.7 kB)
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(c)1999 The American Physical Society
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||||
| タイトル | ||||||||||||
| タイトル | Spectral hole burning quantum efficiency and electron traps in Sm21-ion-doped aluminosilicate glasses | |||||||||||
| 言語 | en | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
| 資源タイプ | journal article | |||||||||||
| 著者 |
Song, Hongwei
× Song, Hongwei
× Hayakawa, Tomokatsu
× Nogami, Masayuki
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| 著者別名 | ||||||||||||
| 姓名 | 早川, 知克 | |||||||||||
| 著者別名 | ||||||||||||
| 姓名 | 野上, 正行 | |||||||||||
| 書誌情報 |
en : PHYSICAL REVIEW B 巻 59, 号 18, p. 11760-11766, 発行日 1999-05-01 |
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| 出版者 | ||||||||||||
| 出版者 | American Physical Society | |||||||||||
| 言語 | en | |||||||||||
| ISSN | ||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||
| 収録物識別子 | 1098-0121 | |||||||||||
| item_10001_source_id_32 | ||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||
| 収録物識別子 | AA11187113 | |||||||||||
| 出版タイプ | ||||||||||||
| 出版タイプ | VoR | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
| 内容記述 | ||||||||||||
| 内容記述タイプ | Other | |||||||||||
| 内容記述 | Persistent spectral hole burning (PSHB) in the 7F0-5D0 transition and the electron excitation in the 7F0-4f5d transition of Sm2+ doped in Al2O3-SiO2 glasses were studied from the measurements of hole burning efficiency and the refilling of the burnt hole. The PSHB at low temperature is attributed to the optically activated rearrangement of OH bonds surrounding Sm2+ ions. On the other hand, the PSHB at high temperature is attributed to one-step electron tunneling in the excitation state. The barrier heights for hole filling corresponding to the two mechanisms were determined to be ?0.27 and ?0.90 eV, respectively. Thermal depth of the trap that captures electrons by two-step ionization via the 4f5d state was determined to be ?0.35 eV below the conduction band. A model was proposed for describing the PSHB and electron excitation of Sm2+ doped in Al2O3-SiO2 glasses. In addition, the dependence of hole burning efficiency on the Al2O3 concentration, temperature, and burning wavelength was also studied. | |||||||||||
| 言語 | en | |||||||||||
