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Hydrogen plasma passivation of GaAs on Si substrates for solar cell fabrication
https://nitech.repo.nii.ac.jp/records/4800
https://nitech.repo.nii.ac.jp/records/4800e6b421b6-e4d8-421e-b46c-521048d2be42
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (88.3 kB)
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Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 87(5), pp.2285- 2288 ; 2000 and may be found at http://link.aip.org/link/?jap/87/2285
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||||||||
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| 公開日 | 2012-11-06 | |||||||||||||||||||||
| タイトル | ||||||||||||||||||||||
| タイトル | Hydrogen plasma passivation of GaAs on Si substrates for solar cell fabrication | |||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||
| 言語 | ||||||||||||||||||||||
| 言語 | eng | |||||||||||||||||||||
| 資源タイプ | ||||||||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||||||
| 資源タイプ | journal article | |||||||||||||||||||||
| 著者 |
曾我, 哲夫
× 曾我, 哲夫
× Jimbo, Takashi
× Wang, G.
× Otsuka, K.
× Umeno, Masayoshi
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| 著者別名 | ||||||||||||||||||||||
| 姓名 | Soga, Tetsuo | |||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||
| 姓名 | 曾我, 哲夫 | |||||||||||||||||||||
| 言語 | ja | |||||||||||||||||||||
| 姓名 | ソガ, テツオ | |||||||||||||||||||||
| 言語 | ja-Kana | |||||||||||||||||||||
| 著者別名 | ||||||||||||||||||||||
| 姓名 | 神保, 孝志 | |||||||||||||||||||||
| 著者別名 | ||||||||||||||||||||||
| 姓名 | 梅野, 正義 | |||||||||||||||||||||
| 書誌情報 |
en : JOURNAL OF APPLIED PHYSICS 巻 87, 号 5, p. 2285-2288, 発行日 2000-03-01 |
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| 出版者 | ||||||||||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||
| ISSN | ||||||||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||||||||
| 収録物識別子 | 0021-8979 | |||||||||||||||||||||
| item_10001_source_id_32 | ||||||||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||||||||
| 収録物識別子 | AA00693547 | |||||||||||||||||||||
| 出版タイプ | ||||||||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||||||||
| 内容記述 | ||||||||||||||||||||||
| 内容記述タイプ | Other | |||||||||||||||||||||
| 内容記述 | The effects of hydrogen plasma treatment and postannealing on GaAs solar cells on Si substrates have been investigated. It is found that postannealing temperature is an important parameter to obtain GaAs on Si with a long minority carrier lifetime. The minority carrier lifetime is increased and the deep level concentration is decreased by the hydrogen plasma treatment. Even after 450°C postannealing with the complete recovery of the shallow impurity level, the minority carrier lifetime is still longer and the deep level concentration is lower than those of the as-grown sample. It means that the defects in GaAs on Si are passivated by hydrogen. The efficiency of GaAs-on-Si solar cell (air mass 0, 1 sun) is improved from 16.6% (as-grown) to 18.3% by the hydrogen plasma passivation and to 17.2% by the hydrogen plasma passivation and postannealing at 450°C. | |||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||
