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Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors
https://nitech.repo.nii.ac.jp/records/4817
https://nitech.repo.nii.ac.jp/records/481768efe54c-7723-405b-85cc-af97f7b78d98
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (1.6 MB)
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Copyright (c) 2000 IEICE http://search.ieice.org/index.html
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2012-11-06 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Ishikawa, Hiroyasu
× Ishikawa, Hiroyasu× Nakada, Naoyuki× Nakaji, Masaharu× Zhao, Guang-Yuan× Egawa, Takashi× Jimbo, Takashi× Umeno, Masayoshi |
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著者別名 | ||||||
姓名 | 江川, 孝志 | |||||
著者別名 | ||||||
姓名 | 神保, 孝志 | |||||
著者別名 | ||||||
姓名 | 梅野, 正義 | |||||
書誌情報 |
IEICE transactions on electronics 巻 E83-C, 号 4, p. 591-597, 発行日 2000-04-20 |
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出版者 | ||||||
出版者 | Institute of Electronics, Information and Communication Engineers | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 09168524 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA10826283 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | Investigations were carried out on metalorganic-chemical-vapor-deposition (MOCVD)-grown strained AlGaN/ GaN/sapphire structures using X-ray diffratometry. While AlGaN with lower AlN molar fraction (< 0.1) is under the in-plane compressive stress, it is under the in-plane tensile stress with high AlN molar fraction (> 0.1). Though tensile stress caused the cracks in AlGaN layer with high AlN molar fraction, we found that the cracks dramatically reduced when the GaN layer quality was not good. Using this technique, we fabricated a GaInN multi-quantum-well (MQW) surface emitting diodes were fabricated on 15 pairs of AlGaN/GaN distributed Bragg reflector (DBR) structures. The reflectivity of 15 pairs of AlGaN/GaN DBR structure has been shown as 75% at 435 nm. Considerably higher output power (1.5 times) has been observed for DBR based GaInN MQW LED when compared with non-DBR based MQW structures. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |