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Ce concentration dependence on the magnetic and transport properties of Ce doped Si epitaxial films prepared by molecular beam epitaxy
https://nitech.repo.nii.ac.jp/records/5060
https://nitech.repo.nii.ac.jp/records/506031181672-4c35-4f4f-8815-1d332c47d48a
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (47.6 kB)
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Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 91(10), pp.7905- 7907 ; 2002 and may be found at http://link.aip.org/link/?jap/91/7905
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||
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| 公開日 | 2012-11-06 | |||||||||||||||
| タイトル | ||||||||||||||||
| タイトル | Ce concentration dependence on the magnetic and transport properties of Ce doped Si epitaxial films prepared by molecular beam epitaxy | |||||||||||||||
| 言語 | en | |||||||||||||||
| 言語 | ||||||||||||||||
| 言語 | eng | |||||||||||||||
| 資源タイプ | ||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||
| 資源タイプ | journal article | |||||||||||||||
| 著者 |
Yokota, Takeshi
× Yokota, Takeshi
× Fujimura, N.
× Wada, T.
× Hamasaki, S.
× Ito, T.
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| 著者別名 | ||||||||||||||||
| 姓名 | 横田, 壮司 | |||||||||||||||
| 書誌情報 |
en : JOURNAL OF APPLIED PHYSICS 巻 91, 号 10, p. 7905-7907, 発行日 2002-05-15 |
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| 出版者 | ||||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||||
| 言語 | en | |||||||||||||||
| ISSN | ||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||
| 収録物識別子 | 0021-8979 | |||||||||||||||
| item_10001_source_id_32 | ||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||
| 収録物識別子 | AA00693547 | |||||||||||||||
| 出版タイプ | ||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||
| item_10001_relation_34 | ||||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||||
| 識別子タイプ | DOI | |||||||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.1451878 | |||||||||||||||
| 関連名称 | 10.1063/1.1451878 | |||||||||||||||
| 内容記述 | ||||||||||||||||
| 内容記述タイプ | Other | |||||||||||||||
| 内容記述 | Diluted magnetic semiconductors, Si:Ce thin films with the Ce concentration below 1.5 at.%, were prepared by solid source molecular beam epitaxy. Magnetization curves (M-H) for all the samples show superparamagnetic behaviors at least up to 300 K. Temperature dependence of the magnetic susceptibility (χ-T) has a cusp, which is ascribed to the spin glass. Temperature dependence of resistivity (ρ-T) also has a cusp at around the cusp temperature in χ-T curves. As the amount of substituted Ce in Si estimated from the lattice constant increases, the cusp temperature also increases. The amount of substituted Ce in Si is considered to play an important role for the anomalous magnetic and transport properties. | |||||||||||||||
| 言語 | en | |||||||||||||||
