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Ce concentration dependence on the magnetic and transport properties of Ce doped Si epitaxial films prepared by molecular beam epitaxy
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Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 91(10), pp.7905- 7907 ; 2002 and may be found at http://link.aip.org/link/?jap/91/7905
Diluted magnetic semiconductors, Si:Ce thin films with the Ce concentration below 1.5 at.%, were prepared by solid source molecular beam epitaxy. Magnetization curves (M-H) for all the samples show superparamagnetic behaviors at least up to 300 K. Temperature dependence of the magnetic susceptibility (χ-T) has a cusp, which is ascribed to the spin glass. Temperature dependence of resistivity (ρ-T) also has a cusp at around the cusp temperature in χ-T curves. As the amount of substituted Ce in Si estimated from the lattice constant increases, the cusp temperature also increases. The amount of substituted Ce in Si is considered to play an important role for the anomalous magnetic and transport properties.
Ce concentration dependence on the magnetic and transport properties of Ce doped Si epitaxial films prepared by molecular beam epitaxy
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