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{"_buckets": {"deposit": "2d9e041c-bb8a-490c-a61b-703f4ba3a016"}, "_deposit": {"created_by": 3, "id": "5118", "owners": [3], "pid": {"revision_id": 0, "type": "depid", "value": "5118"}, "status": "published"}, "_oai": {"id": "oai:nitech.repo.nii.ac.jp:00005118", "sets": ["31"]}, "author_link": ["4028", "17145"], "item_10001_biblio_info_28": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2003-01-13", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "2", "bibliographicPageEnd": "220", "bibliographicPageStart": "218", "bibliographicVolumeNumber": "82", "bibliographic_titles": [{"bibliographic_title": "APPLIED PHYSICS LETTERS"}]}]}, "item_10001_description_36": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "We report on the interface properties of thermally oxidized n-GaN metal-oxide-semiconductor capacitors fabricated on sapphire substrates. 100-nm-thick β-Ga2O3 was grown by dry oxidation at 880°C for 5 h. From secondary ion mass spectrometry measurements, an intermediate Ga oxynitride layer with graded compositions is clearly observed at the β-Ga2O3/GaN interface. Capacitance-voltage measurements show a deep depletion feature and a low interface state density of ? 5.5×1010eV-1cm-2. Additionally, no discrete interface traps can be detected by deep-level transient spectroscopic measurements. These results indicate that the surface Fermi level is unpinned at the β-Ga2O3/GaN interface, which may be associated with the presence of the interfacial Ga oxynitride layer.", "subitem_description_type": "Other"}]}, "item_10001_description_38": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_description": "application/pdf", "subitem_description_type": "Other"}]}, "item_10001_full_name_27": {"attribute_name": "著者別名", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "4028", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "神保, 孝志"}]}]}, "item_10001_publisher_29": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_10001_relation_34": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "10.1063/1.1536029"}], "subitem_relation_type": "isIdenticalTo", "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://dx.doi.org/10.1063/1.1536029", "subitem_relation_type_select": "DOI"}}]}, "item_10001_source_id_30": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "00036951", "subitem_source_identifier_type": "ISSN"}]}, "item_10001_source_id_32": {"attribute_name": "書誌レコードID(NCID)", "attribute_value_mlt": [{"subitem_source_identifier": "AA00543432", "subitem_source_identifier_type": "NCID"}]}, "item_10001_version_type_33": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Jimbo, Takashi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "4028", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nakano, Yoshitaka", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "17145", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-01-25"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "APL 82_218.pdf", "filesize": [{"value": "66.8 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensefree": "Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 82(2),pp.218-220; 2003 and may be found at http://link.aip.org/link/?apl/82/218", "licensetype": "license_free", "mimetype": "application/pdf", "size": 66800.0, "url": {"label": "本文_fulltext", "url": "https://nitech.repo.nii.ac.jp/record/5118/files/APL 82_218.pdf"}, "version_id": "47dd8db6-0b99-4491-8157-cac7715327c0"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Interface properties of thermally oxidized n-GaN metal-oxide-semiconductor capacitors", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Interface properties of thermally oxidized n-GaN metal-oxide-semiconductor capacitors", "subitem_title_language": "en"}]}, "item_type_id": "10001", "owner": "3", "path": ["31"], "permalink_uri": "https://nitech.repo.nii.ac.jp/records/5118", "pubdate": {"attribute_name": "公開日", "attribute_value": "2012-11-06"}, "publish_date": "2012-11-06", "publish_status": "0", "recid": "5118", "relation": {}, "relation_version_is_last": true, "title": ["Interface properties of thermally oxidized n-GaN metal-oxide-semiconductor capacitors"], "weko_shared_id": -1}
Interface properties of thermally oxidized n-GaN metal-oxide-semiconductor capacitors
https://nitech.repo.nii.ac.jp/records/5118
https://nitech.repo.nii.ac.jp/records/5118a048c5bd-369d-4c5d-9dc1-5b30eaf93f2c
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (66.8 kB)
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Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 82(2),pp.218-220; 2003 and may be found at http://link.aip.org/link/?apl/82/218
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2012-11-06 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Interface properties of thermally oxidized n-GaN metal-oxide-semiconductor capacitors | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Jimbo, Takashi
× Jimbo, Takashi× Nakano, Yoshitaka |
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著者別名 | ||||||
姓名 | 神保, 孝志 | |||||
書誌情報 |
APPLIED PHYSICS LETTERS 巻 82, 号 2, p. 218-220, 発行日 2003-01-13 |
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出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00036951 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00543432 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1063/1.1536029 | |||||
関連名称 | 10.1063/1.1536029 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | We report on the interface properties of thermally oxidized n-GaN metal-oxide-semiconductor capacitors fabricated on sapphire substrates. 100-nm-thick β-Ga2O3 was grown by dry oxidation at 880°C for 5 h. From secondary ion mass spectrometry measurements, an intermediate Ga oxynitride layer with graded compositions is clearly observed at the β-Ga2O3/GaN interface. Capacitance-voltage measurements show a deep depletion feature and a low interface state density of ? 5.5×1010eV-1cm-2. Additionally, no discrete interface traps can be detected by deep-level transient spectroscopic measurements. These results indicate that the surface Fermi level is unpinned at the β-Ga2O3/GaN interface, which may be associated with the presence of the interfacial Ga oxynitride layer. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |