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Interface properties of thermally oxidized n-GaN metal-oxide-semiconductor capacitors
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Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 82(2),pp.218-220; 2003 and may be found at http://link.aip.org/link/?apl/82/218
We report on the interface properties of thermally oxidized n-GaN metal-oxide-semiconductor capacitors fabricated on sapphire substrates. 100-nm-thick β-Ga2O3 was grown by dry oxidation at 880°C for 5 h. From secondary ion mass spectrometry measurements, an intermediate Ga oxynitride layer with graded compositions is clearly observed at the β-Ga2O3/GaN interface. Capacitance-voltage measurements show a deep depletion feature and a low interface state density of ? 5.5×1010eV-1cm-2. Additionally, no discrete interface traps can be detected by deep-level transient spectroscopic measurements. These results indicate that the surface Fermi level is unpinned at the β-Ga2O3/GaN interface, which may be associated with the presence of the interfacial Ga oxynitride layer.
Interface properties of thermally oxidized n-GaN metal-oxide-semiconductor capacitors
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