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Using cross-section transmission electron microscopy (XTEM) we have studied the surface and subsurface structure of individual ripples having submicron scale wavelength and nanometer scale amplitude, generated by obliquely incident (50?120 keV) Ar ion bombardment of Si. The XTEM results reveal that the front slopes of ion-induced ripples have amorphous layers containing bubbles with sizes ranging from about 3 to 15 nm facing the ion beam direction. A hinner amorphous layer without bubbles, on the other hand, persists on the rear slope of ripples. We also observe an irregular interface between a-Si and c-Si, which is due to the direct impact amorphization mechanism prevalent near the end-of-range during heavy ion irradiation.
Structural investigation of keV Ar-ion-induced surface ripples in Si by cross-sectional transmission electron microscopy
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