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Wavelength-tunable and high-temperature lasing in ZnMgO nanoneedles
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Copyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 89(8),pp.081107-1 - 081107-3; 2006 and may be found at http://link.aip.org/link/?apl/89/81107
Zn1-xMgxO nanoneedles were prepared by an ion-beam technique on Zn1-xMgxO thin films with Mg contents of up to 21 at.%. The photoluminescence emission energies of the Zn1-xMgxO nanoneedles measured at room temperature increased monotonically with Mg contents and it reached 3.6 eV when x = 0.21. Random laser action was observed in the Zn1-xMgxO nanoneedles with x ? 0.1 at temperature ranging from 300 to 470 K under 355 nm optical excitation. The characteristic temperature of the Zn1-xMgxO nanoneedles was determined to be 84 K. The high-temperature lasing of the Zn1-xMgxO nanoneedles are attributed to the high crystal quality of the nanoneedles, enhancement of oscillator strength in nanostructures, and a self-compensation mechanism in random laser cavities.
Wavelength-tunable and high-temperature lasing in ZnMgO nanoneedles
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