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Charge transport properties of p-CdTe/n-CdTe/n+-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers
https://nitech.repo.nii.ac.jp/records/5867
https://nitech.repo.nii.ac.jp/records/586763339441-ab5b-4b33-a1ae-6e9f3d409e29
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (1.1 MB)
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(c)2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics [See also CITATION, DOI] and may be found at http://dx.doi.org/10.1063/1.4828479
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2015-10-22 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Charge transport properties of p-CdTe/n-CdTe/n+-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Niraula, Madan
× Niraula, Madan× Yasuda, Kazuhito× Wajima, Y.× Yamashita, H.× Tsukamoto, Y.× Suzuki, Y.× Matsumoto, M.× Takai, N.× Agata, Y. |
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著者別名 | ||||||
姓名 | ニラウラ, マダン | |||||
著者別名 | ||||||
姓名 | 安田, 和人 | |||||
書誌情報 |
Journal of Applied Physics 巻 114, 号 16, p. 164510-1-164510-5, 発行日 2013-10-28 |
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出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00218979 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00693547 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1063/1.4828479 | |||||
関連名称 | 10.1063/1.4828479 | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |