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Surface recombination velocities for 4H-SiC: Temperature dependence and difference in conductivity type at several crystal faces
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The following article appeared in M. Kato et al., J. appl. phys. 127(19), 195702 (2020) and may be found at https://doi.org/10.1063/5.0007900.
Surface recombination velocities for 4H-SiC: Temperature dependence and difference in conductivity type at several crystal faces
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