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Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC
https://nitech.repo.nii.ac.jp/records/6677
https://nitech.repo.nii.ac.jp/records/667750b2cbd2-6ce7-4cac-a3f0-0a87b1ba348d
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (388.7 kB)
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This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.
The following article appeared in M. Kato et al., J. appl. phys. 124(9), 095702 (2018) and may be found at https://doi.org/10.1063/1.5042561. |
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2021-03-11 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Kato, Masashi
× Kato, Masashi× Katahira, Shinya× Ichikawa, Yoshihito× Harada, Shunta× Kimoto, Tsunenobu |
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著者別名 | ||||||
姓名 | 加藤, 正史 | |||||
書誌情報 |
en : Journal of Applied Physics 巻 124, 号 9, p. 095702, 発行日 2018-09-07 |
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出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00218979 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00693547 | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.5042561 | |||||
関連名称 | 10.1063/1.5042561 | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |