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Characterization of epitaxially grown GaAs on Si substrates with III-V compounds intermediate layers by metalorganic chemical vapor deposition
https://nitech.repo.nii.ac.jp/records/3817
https://nitech.repo.nii.ac.jp/records/3817baf2d40f-6653-4e24-bd06-40dfa2a2da9a
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (341.7 kB)
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Copyright (1985) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 57(10), pp4578-4582 ; 1985 and may be found at http://link.aip.org/link/?jap/57/4578
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||||||||
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| 公開日 | 2012-11-06 | |||||||||||||||||||||
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| タイトル | Characterization of epitaxially grown GaAs on Si substrates with III-V compounds intermediate layers by metalorganic chemical vapor deposition | |||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||
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| 言語 | eng | |||||||||||||||||||||
| 資源タイプ | ||||||||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||||||
| 資源タイプ | journal article | |||||||||||||||||||||
| 著者 |
曾我, 哲夫
× 曾我, 哲夫
× Hattori, Shuzo
× Sakai, Shiro
× Takeyasu, Masanari
× Umeno, Masayoshi
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| 著者別名 | ||||||||||||||||||||||
| 姓名 | Soga, Tetsuo | |||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||
| 姓名 | 曾我, 哲夫 | |||||||||||||||||||||
| 言語 | ja | |||||||||||||||||||||
| 姓名 | ソガ, テツオ | |||||||||||||||||||||
| 言語 | ja-Kana | |||||||||||||||||||||
| 著者別名 | ||||||||||||||||||||||
| 姓名 | 梅野, 正義 | |||||||||||||||||||||
| bibliographic_information |
en : JOURNAL OF APPLIED PHYSICS 巻 57, 号 10, p. 4578-4582, 発行日 1985-05-15 |
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| 出版者 | American Institute of Physics | |||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||
| ISSN | ||||||||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||||||||
| 収録物識別子 | 0021-8979 | |||||||||||||||||||||
| item_10001_source_id_32 | ||||||||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||||||||
| 収録物識別子 | AA00693547 | |||||||||||||||||||||
| 出版タイプ | ||||||||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||||||||
| item_10001_relation_34 | ||||||||||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||||||||||
| 識別子タイプ | DOI | |||||||||||||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.335363 | |||||||||||||||||||||
| 関連名称 | 10.1063/1.335363 | |||||||||||||||||||||
| 内容記述 | ||||||||||||||||||||||
| 内容記述タイプ | Other | |||||||||||||||||||||
| 内容記述 | GaAs grown on Si substrate with AlP, AlGaP, GaP/GaAs0.5P0.5 superlattice, and GaAs0.5P0.5/GaAs superlattice was investigated by varying the structure of the intermediate layers between GaAs and Si by metalorganic chemical vapor deposition. It was found that (1) the insertion of AlP and AlGaP layers makes the crystallinity and the surface morphology better, (2) PL (photoluminescence) intensity with two superlattice layers is about one order of magnitude stronger than that without these layers, (3) the crack formation in the GaAs surface layer can be avoided by the strained superlattice layers, (4) the PL intensity has a maximum at about 20 nm for each layer thickness in the superlattices, and (5) the PL intensity increases and the carrier concentration decreases while increasing the thickness of the surface GaAs and saturates over 3 μm. The PL intensity of GaAs on Si substrates is about 80% of that grown on GaAs substrates. | |||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||
