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Fundamental and practical aspects of reactive N+2-ion sputtering in Auger in-depth analysis
https://nitech.repo.nii.ac.jp/records/4078
https://nitech.repo.nii.ac.jp/records/4078435faed3-5d8f-4bc3-b2dc-8754318bd74b
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (742.8 kB)
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Copyright (1991) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 69(6), pp.3723- 3728 ; 1991 and may be found at http://link.aip.org/link/?jap/69/3723
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2012-11-06 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Fundamental and practical aspects of reactive N+2-ion sputtering in Auger in-depth analysis | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Kawabata, T.
× Kawabata, T.× Okuyama, F.× Tanemura, Masaki |
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著者別名 | ||||||
姓名 | 種村, 眞幸 | |||||
書誌情報 |
JOURNAL OF APPLIED PHYSICS 巻 69, 号 6, p. 3723-3728, 発行日 1991-03-15 |
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出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00218979 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00693547 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1063/1.348465 | |||||
関連名称 | 10.1063/1.348465 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | Polycrystalline Al, Mo, Ti, and Ta films deposited on Si wafers were systematically depth profiled by Auger electron spectroscopy using Ar+ and N+2 ions as projectile. In agreement with the traditional concept of reactive sputtering, N+2 sputtering of Al and Mo films textured the surface less, thereby improving depth resolution significantly. N+2‐sputtered Ti and Ta films, on the other hand, were characterized by microprojections thickly covering the bombarded area, forming a striking contrast to Ar+‐sputtered Ti and Ta displaying less‐enhanced surface texturing. As revealed by electron spectroscopy for chemical analysis, the N+2‐bombarded surface was nitrided for every material, and the nitride zone was confined to the surface or near‐surface for Al and Mo and extended far below the surface for Ti and Ta. It is thus considered that three‐dimensional nitridation lay under the enhanced surface texturing observed for N+2‐sputtered Ti and Ta. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |