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Bond-length relaxation in crystalline Si1-xGex alloys: An extended x-ray-absorption fine-structure study
https://nitech.repo.nii.ac.jp/records/4150
https://nitech.repo.nii.ac.jp/records/4150f42659e3-ac67-4d51-8d94-905716a242f2
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (992.6 kB)
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(c)1992 The American Physical Society
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2012-11-06 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Bond-length relaxation in crystalline Si1-xGex alloys: An extended x-ray-absorption fine-structure study | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Kajiyama, Hiroshi
× Kajiyama, Hiroshi× Muramatsu, Shinichi× Shimada, Toshikazu× Nishino, Yoichi |
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著者別名 | ||||||
姓名 | 西野, 洋一 | |||||
書誌情報 |
PHYSICAL REVIEW B 巻 45, 号 24, p. 14005-14010, 発行日 1992-06-15 |
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出版者 | ||||||
出版者 | American Physical Society | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 01631829 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00362255 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1103/PhysRevB.45.14005 | |||||
関連名称 | 10.1103/PhysRevB.45.14005 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | Extended x-ray-absorption fine-structure spectra for crystalline Si1-xGex alloys, measured at the K edge of Ge at room temperature, are analyzed with a curve-fitting method based on the spherical-wave approximation. The Ge-Ge and Ge-Si bond lengths, coordination numbers of Ge and Si atoms around a Ge atom, and Debye-Waller factors of Ge and Si atoms are obtained. It is shown that Ge-Ge and Ge-Si bonds relax completely, for all Ge concentrations of their study, while the lattice constant varies monotonically, following Vegards law. As noted by Bragg and later by Pauling and Huggins, the Ge-Ge and Ge-Si bond lengths are close to the sum of their constituent-element atomic radii: nearly 2.45 for Ge-Ge bonds and 2.40 for Ge-Si bonds. A study on the coordination around a Ge atom in the alloys revealed that Ge and Si atoms mix randomly throughout the compositional range studied. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |