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Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density
https://nitech.repo.nii.ac.jp/records/4585
https://nitech.repo.nii.ac.jp/records/4585abbd3e39-57cf-4892-9011-dce1846ec77c
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (91.5 kB)
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Copyright (1998) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 73(6), pp.809 - 811; 1998 and may be found at http://link.aip.org/link/?apl/73/809
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2012-11-06 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Arulkumaran, S.
× Arulkumaran, S.× Egawa, Takashi× Ishikawa, H.× Jimbo, Takashi× Umeno, Masayoshi |
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著者別名 | ||||||
姓名 | 江川, 孝志 | |||||
著者別名 | ||||||
姓名 | 神保, 孝志 | |||||
著者別名 | ||||||
姓名 | 梅野, 正義 | |||||
書誌情報 |
APPLIED PHYSICS LETTERS 巻 73, 号 6, p. 809-811, 発行日 1998-08-10 |
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出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00036951 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00543432 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1063/1.122009 | |||||
関連名称 | 10.1063/1.122009 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | The electrical properties of electron beam (EB) evaporated silicon dioxide (SiO2)/n-GaN, plasma enhanced chemical vapor deposited (PECVD) SiO2/n-GaN, and PECVD silicon nitride (Si3N4)/n-GaN interfaces were investigated using high frequency capacitance-voltage measurements. Compositions of the deposited insulating layers (SiO2 and Si3N4) were analyzed using x-ray photoelectron spectroscopy. Metal-insulator-semiconductor structures were fabricated on the metalorganic chemical vapor deposition grown n-type GaN layers using EB, PECVD grown SiO2 and PECVD grown Si3N4 layers. Minimum interface state density (2.5×1011eV-1cm-2) has been observed in the PECVD grown SiO2/n-GaN interface when it was compared with EB evaporated SiO2/n-GaN interface (5.3×1011eV-1cm-2) and PECVD Si3N4/n-GaN interface (6.5×1011eV-1cm-2). The interface state density (Nf) depends on the composition of deposited insulating layers. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |