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MOVPE Growth of Thick Single Crystal CdZnTe Epitaxial Layers on Si Substrate for Nuclear Radiation Detector Development
https://nitech.repo.nii.ac.jp/records/4647
https://nitech.repo.nii.ac.jp/records/464718ecf0a0-4ad8-4b88-821e-2fe0a378fab5
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (338.4 kB)
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(c)2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
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Item type | 会議発表論文 / Conference Paper(1) | |||||
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公開日 | 2015-05-27 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | MOVPE Growth of Thick Single Crystal CdZnTe Epitaxial Layers on Si Substrate for Nuclear Radiation Detector Development | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
資源タイプ | conference paper | |||||
著者 |
Niraula, Madan
× Niraula, Madan× Yasuda, K.× Namba, S× Kondo, T.× Muramatsu, S.× Wajima, Y× Yamashita, H× Agata, Y |
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著者別名 | ||||||
姓名 | ニラウラ, マダン | |||||
書誌情報 |
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012 IEEE 号 R07-1, p. 4212-4215, 発行日 2012-11 |
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出版者 | ||||||
出版者 | Institute of Electrical and Electronics Engineers | |||||
ISBN | ||||||
識別子タイプ | ISBN | |||||
関連識別子 | 9781467320283 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 10823654 | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1109/NSSMIC.2012.6551960 | |||||
関連名称 | 10.1109/NSSMIC.2012.6551960 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | California, USA, October 29 - November 3, 2012 | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |