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Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire
https://nitech.repo.nii.ac.jp/records/4813
https://nitech.repo.nii.ac.jp/records/4813f6bb63d0-62c4-45c7-9106-449cd3c3a9fc
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (63.1 kB)
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Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 76(14), pp.1804 -1806; 2000 and may be found at http://link.aip.org/link/?apl/76/1804
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2012-11-06 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Nakada, N.
× Nakada, N.× Nakaji, M.× Ishikawa, H.× Egawa, Takashi× Jimbo, Takashi× Umeno, Masayoshi |
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著者別名 | ||||||
姓名 | 江川, 孝志 | |||||
著者別名 | ||||||
姓名 | 神保, 孝志 | |||||
著者別名 | ||||||
姓名 | 梅野, 正義 | |||||
書誌情報 |
APPLIED PHYSICS LETTERS 巻 76, 号 14, p. 1804-1806, 発行日 2000-04-03 |
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出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00036951 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00543432 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | An InGaN multiple-quantum-well light-emitting diode (LED) containing a GaN/AlGaN distributed Bragg reflector has been grown on a sapphire substrate by metalorganic chemical vapor deposition. Comparing with the conventional LED, the output power has been improved from 79 to 120 μW under 20 mA direct current biasing condition and the external quantum efficiency has been also improved from 0.16% to 0.23% under 10 mA dc current. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |