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PH3/H2 plasma passivation of metal-organic chemical vapor deposition grown GaAs on Si
https://nitech.repo.nii.ac.jp/records/4881
https://nitech.repo.nii.ac.jp/records/488184d3186c-b036-49c5-a387-641ffc25ff5c
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (100.5 kB)
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Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 88(6), pp.3689- 3694 ; 2000 and may be found at http://link.aip.org/link/?jap/88/3689
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||||||||
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| 公開日 | 2012-11-06 | |||||||||||||||||||||
| タイトル | ||||||||||||||||||||||
| タイトル | PH3/H2 plasma passivation of metal-organic chemical vapor deposition grown GaAs on Si | |||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||
| 言語 | ||||||||||||||||||||||
| 言語 | eng | |||||||||||||||||||||
| 資源タイプ | ||||||||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||||||
| 資源タイプ | journal article | |||||||||||||||||||||
| 著者 |
Wang, Gang
× Wang, Gang
× Ogawa, Takashi
× 曾我, 哲夫
× Jimbo, Takashi
× Umeno, Masayoshi
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| 著者別名 | ||||||||||||||||||||||
| 姓名 | Soga, Tetsuo | |||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||
| 姓名 | 曾我, 哲夫 | |||||||||||||||||||||
| 言語 | ja | |||||||||||||||||||||
| 姓名 | ソガ, テツオ | |||||||||||||||||||||
| 言語 | ja-Kana | |||||||||||||||||||||
| 著者別名 | ||||||||||||||||||||||
| 姓名 | 神保, 孝志 | |||||||||||||||||||||
| 著者別名 | ||||||||||||||||||||||
| 姓名 | 梅野, 正義 | |||||||||||||||||||||
| bibliographic_information |
en : JOURNAL OF APPLIED PHYSICS 巻 88, 号 6, p. 3689-3694, 発行日 2000-09-15 |
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| 出版者 | ||||||||||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||
| ISSN | ||||||||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||||||||
| 収録物識別子 | 0021-8979 | |||||||||||||||||||||
| item_10001_source_id_32 | ||||||||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||||||||
| 収録物識別子 | AA00693547 | |||||||||||||||||||||
| 出版タイプ | ||||||||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||||||||
| 内容記述 | ||||||||||||||||||||||
| 内容記述タイプ | Other | |||||||||||||||||||||
| 内容記述 | Effects of PH3/H2 (PH3/H2=10%) plasma passivation of GaAs grown on Si substrate have been investigated in detail. It is observed that both the surface phosphidization and defect hydrogenation can be realized simultaneously with a reduced plasma-induced damage. The optical and electrical properties of GaAs on Si are effectively improved by PH3/H2 plasma exposure due to the passivation of bulk and surface defects-related nonradiative recombination centers by incorporation of hydrogen (H) and phosphorous (P) atoms. As a result, the PH3/H2 plasma exposed GaAs Schottky diodes on Si show an increase in the reverse breakdown voltage by a factor of about 1.6, and the as-passivated GaAs solar cell grown on Si shows an increase in the conversion efficiency from 15.9% to 18.6% compared to that of the as-grown samples. The passivated GaAs devices on Si show outstanding thermal stability, which is probably due to the active participation of both H and P atoms in the PH3/H2 plasma passivation process. | |||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||
