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Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition
https://nitech.repo.nii.ac.jp/records/4884
https://nitech.repo.nii.ac.jp/records/48845b2b3576-ef90-4da5-b515-2917856cabba
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (46.1 kB)
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Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 77(14),pp.2195 -2197; 2000 and may be found at http://link.aip.org/link/?apl/77/2195
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2012-11-06 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Zhao, G. Y.
× Zhao, G. Y.× Adachi, M.× Ishikawa, H.× Egawa, Takashi× Umeno, Masayoshi× Jimbo, Takashi |
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著者別名 | ||||||
姓名 | 江川, 孝志 | |||||
著者別名 | ||||||
姓名 | 梅野, 正義 | |||||
著者別名 | ||||||
姓名 | 神保, 孝志 | |||||
書誌情報 |
APPLIED PHYSICS LETTERS 巻 77, 号 14, p. 2195-2197, 発行日 2000-10-02 |
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出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00036951 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00543432 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | Si delta-doped GaN has been grown by metalorganic chemical-vapor deposition. A very high peak density and narrow full width at half maximum (FWHM) of the carrier profile are obtained. It is found that the peak carrier density of Si delta doping increases with the doping time and SiH4 flow rate, while the FWHM of the carrier profile decreases with both increasing doping time and SiH4 flow rate. Some saturation in the carrier density has also been observed for relatively longer doping time. Except for a broadened carrier distribution in GaN induced by Si diffusion due to high growth temperature, the Si delta-doping properties in GaN are found to be similar to those of GaAs. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |