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  1. 研究論文

Refractive index and degree of inhomogeneity of nanocrystalline TiO2 thin films: Effects of substrate and annealing temperature

https://nitech.repo.nii.ac.jp/records/4885
https://nitech.repo.nii.ac.jp/records/4885
a115797e-32ec-438e-bc14-501b14d685bc
名前 / ファイル ライセンス アクション
JAP 本文_fulltext (252.8 kB)
Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 88(8), pp.4634- 4641; 2000 and may be found at http://link.aip.org/link/?jap/88/4634
Item type 学術雑誌論文 / Journal Article(1)
公開日 2012-11-06
タイトル
タイトル Refractive index and degree of inhomogeneity of nanocrystalline TiO2 thin films: Effects of substrate and annealing temperature
言語 en
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
著者 Mosaddeq-Ur-Rahman, Md

× Mosaddeq-Ur-Rahman, Md

en Mosaddeq-Ur-Rahman, Md

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Yu, Guolin

× Yu, Guolin

en Yu, Guolin

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曾我, 哲夫

× 曾我, 哲夫

en Soga, Tetsuo

ja 曾我, 哲夫
ISNI

ja-Kana ソガ, テツオ


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Jimbo, Takashi

× Jimbo, Takashi

en Jimbo, Takashi

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Ebisu, Hiroshi

× Ebisu, Hiroshi

en Ebisu, Hiroshi

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Umeno, Masayoshi

× Umeno, Masayoshi

en Umeno, Masayoshi

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著者別名
姓名 Soga, Tetsuo
言語 en
姓名 曾我, 哲夫
言語 ja
姓名 ソガ, テツオ
言語 ja-Kana
著者別名
姓名 神保, 孝志
著者別名
姓名 梅野, 正義
bibliographic_information en : JOURNAL OF APPLIED PHYSICS

巻 88, 号 8, p. 4634-4641, 発行日 2000-10-15
出版者
出版者 American Institute of Physics
言語 en
ISSN
収録物識別子タイプ ISSN
収録物識別子 0021-8979
item_10001_source_id_32
収録物識別子タイプ NCID
収録物識別子 AA00693547
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
内容記述
内容記述タイプ Other
内容記述 Nanocrystalline TiO2 thin films, deposited on single crystal Si (100) substrates under different temperature conditions by the sol-gel dip coating method, have been investigated for their optical properties using ultraviolet-visible spectroscopic ellipsometry. A gradual increase in refractive index, n, with increasing annealing temperature up to 600°C, and thereafter a sharp increase in n at 800°C of annealing temperature have been observed. For the heat-treated and low temperature (400°C) annealed films, n is found to be higher at the film-substrate interface than at the film surface and the refractive index gradient slightly increases for the annealed sample. However, for the 600°C temperature annealed film, the refractive index gradient significantly decreases and the film appears to be almost homogeneous. These results are in sharp contrast with those for the films deposited on a vitreous silica substrate where n was found to be higher at the film surface than at the film-substrate interface and the refractive index gradient increased with increasing annealing temperature. For the high temperature (800°C) annealed sample on the Si substrate, formation of a thick SiO2 interfacial layer has been observed and the degree of homogeneity deteriorates severely.
言語 en
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