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Strong adhesion in nanocrystalline diamond films on silicon substrates
https://nitech.repo.nii.ac.jp/records/4947
https://nitech.repo.nii.ac.jp/records/4947129893b7-850f-4510-bab0-dd3deafb4889
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (137.9 kB)
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Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 89(9), pp.4874- 4878 ; 2001 and may be found at http://link.aip.org/link/?jap/89/4874
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||||||
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| 公開日 | 2012-11-06 | |||||||||||||||||||
| タイトル | ||||||||||||||||||||
| タイトル | Strong adhesion in nanocrystalline diamond films on silicon substrates | |||||||||||||||||||
| 言語 | en | |||||||||||||||||||
| 言語 | ||||||||||||||||||||
| 言語 | eng | |||||||||||||||||||
| 資源タイプ | ||||||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||||
| 資源タイプ | journal article | |||||||||||||||||||
| 著者 |
Sharda, T.
× Sharda, T.
× Umeno, Masayoshi
× 曾我, 哲夫
× Jimbo, Takashi
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| 著者別名 | ||||||||||||||||||||
| 姓名 | 梅野, 正義 | |||||||||||||||||||
| 著者別名 | ||||||||||||||||||||
| 姓名 | Soga, Tetsuo | |||||||||||||||||||
| 言語 | en | |||||||||||||||||||
| 姓名 | 曾我, 哲夫 | |||||||||||||||||||
| 言語 | ja | |||||||||||||||||||
| 姓名 | ソガ, テツオ | |||||||||||||||||||
| 言語 | ja-Kana | |||||||||||||||||||
| 著者別名 | ||||||||||||||||||||
| 姓名 | 神保, 孝志 | |||||||||||||||||||
| bibliographic_information |
en : JOURNAL OF APPLIED PHYSICS 巻 89, 号 9, p. 4874-4878, 発行日 2001-05-01 |
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| 出版者 | ||||||||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||||||||
| 言語 | en | |||||||||||||||||||
| ISSN | ||||||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||||||
| 収録物識別子 | 0021-8979 | |||||||||||||||||||
| item_10001_source_id_32 | ||||||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||||||
| 収録物識別子 | AA00693547 | |||||||||||||||||||
| 出版タイプ | ||||||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||||||
| item_10001_relation_34 | ||||||||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||||||||
| 識別子タイプ | DOI | |||||||||||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.1358318 | |||||||||||||||||||
| 関連名称 | 10.1063/1.1358318 | |||||||||||||||||||
| 内容記述 | ||||||||||||||||||||
| 内容記述タイプ | Other | |||||||||||||||||||
| 内容記述 | Strong adhesion is shown to be achieved in the growth of smooth nanocrystalline diamond (NCD) thin films on silicon substrates at 600°C using biased enhanced growth in microwave plasma chemical vapor deposition. The strong adhesion is evident from the films sustaining compressive stress, which may be as high as 85 GPa. The substrates are bent spherically after deposition, however, films are not peeled off, in spite of having enormous in-plane stress. The strong adhesion may be a result of implanted carbon below the substrate surface with an optimized ion flux density in the initial stages of growth. The compressive stress in the films is shown to be generating from the graphitic and other nondiamond carbon impurities in the films. It was observed that the NCD grain size decreases with biasing hence increasing grain boundary area in the films accommodating more graphitic impurities, which in turn results in an increase in compressive stress in the films. | |||||||||||||||||||
| 言語 | en | |||||||||||||||||||
