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  1. 研究論文

Spectroscopic properties of nitrogen doped hydrogenated amorphous carbon films grown by radio frequency plasma-enhanced chemical vapor deposition

https://nitech.repo.nii.ac.jp/records/4963
https://nitech.repo.nii.ac.jp/records/4963
bdf13d75-0fec-4421-b072-9f3c21c76ae8
名前 / ファイル ライセンス アクション
JAP 本文_fulltext (277.0 kB)
Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 89(12), pp.7924- 7931; 2001 and may be found at http://link.aip.org/link/?jap/89/7924
Item type 学術雑誌論文 / Journal Article(1)
公開日 2012-11-06
タイトル
タイトル Spectroscopic properties of nitrogen doped hydrogenated amorphous carbon films grown by radio frequency plasma-enhanced chemical vapor deposition
言語 en
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
著者 Hayashi, Y.

× Hayashi, Y.

en Hayashi, Y.

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Yu, G.

× Yu, G.

en Yu, G.

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Rahman, M. M.

× Rahman, M. M.

en Rahman, M. M.

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Krishna, K. M.

× Krishna, K. M.

en Krishna, K. M.

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曾我, 哲夫

× 曾我, 哲夫

en Soga, Tetsuo

ja 曾我, 哲夫
ISNI

ja-Kana ソガ, テツオ


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Jimbo, Takashi

× Jimbo, Takashi

en Jimbo, Takashi

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Umeno, Masayoshi

× Umeno, Masayoshi

en Umeno, Masayoshi

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著者別名
姓名 Soga, Tetsuo
言語 en
姓名 曾我, 哲夫
言語 ja
姓名 ソガ, テツオ
言語 ja-Kana
著者別名
姓名 神保, 孝志
著者別名
姓名 梅野, 正義
bibliographic_information en : JOURNAL OF APPLIED PHYSICS

巻 89, 号 12, p. 7924-7931, 発行日 2001-06-15
出版者
出版者 American Institute of Physics
言語 en
ISSN
収録物識別子タイプ ISSN
収録物識別子 0021-8979
item_10001_source_id_32
収録物識別子タイプ NCID
収録物識別子 AA00693547
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
item_10001_relation_34
関連タイプ isIdenticalTo
識別子タイプ DOI
関連識別子 http://dx.doi.org/10.1063/1.1371268
関連名称 10.1063/1.1371268
内容記述
内容記述タイプ Other
内容記述 Nitrogen doped hydrogenated amorphous carbon thin films have been deposited by rf plasma-enhanced chemical vapor deposition using CH4 as the source of carbon and with different nitrogen flow rates (N2/CH4 gas ratios between 0 and 3), at 300 K. The dependence modifications of the optical and the structural properties on nitrogen incorporation were investigated using different spectroscopic techniques, such as, Raman spectroscopy, Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy, ultraviolet-visible (UV-VIS) spectroscopy, electron spin resonance (ESR), photoluminescence (PL) and spectroscopic ellipsometry (SE). Raman spectroscopy and IR absorption reveal an increase in sp2-bonded carbon or a change in sp2 domain size with increasing nitrogen flow rate. It is found that the configuration of nitrogen atoms incorporated into an amorphous carbon network gradually changes from nitrogen atoms surrounded by three (σ bonded) to two (π bonded) neighboring carbons with increasing nitrogen flow rate. Tauc optical gap is reduced from 2.6 to 2.0 eV, and the ESR spin density and the peak-to-peak linewidth increase sharply with increasing nitrogen flow rate. Excellent agreement has been found between the measured SE data and modeled spectra, in which an empirical dielectric function of amorphous materials and a linear void distribution along the thickness have been assumed. The influence of nitrogen on the electronic density of states is explained based on the optical properties measured by UV-VIS and PL including nitrogen lone pair band.
言語 en
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