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Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates
https://nitech.repo.nii.ac.jp/records/5008
https://nitech.repo.nii.ac.jp/records/5008858cdf22-3740-4191-a11a-8cc585addd9f
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (278.3 kB)
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Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 79(16), pp.2567- 2569; 2001 and may be found at http://link.aip.org/link/?apl/79/2567
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2012-11-06 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Zhang, B. J.
× Zhang, B. J.× Egawa, Takashi× Zhao, G. Y.× Ishikawa, H.× Umeno, Masayoshi× Jimbo, Takashi |
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著者別名 | ||||||
姓名 | 江川, 孝志 | |||||
著者別名 | ||||||
姓名 | 梅野, 正義 | |||||
著者別名 | ||||||
姓名 | 神保, 孝志 | |||||
書誌情報 |
APPLIED PHYSICS LETTERS 巻 79, 号 16, p. 2567-2569, 発行日 2001-10-15 |
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出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00036951 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00543432 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1063/1.1410355 | |||||
関連名称 | 10.1063/1.1410355 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | GaN films were grown on sapphire and SiC substrates. The crystal qualities of GaN films were investigated by photoluminescence, atomic force microscopy, and electron-beam-induced current measurements, etc. It was found that the crystal quality of GaN on SiC is better than the one on sapphire. Ni/Au Schottky contacts were formed on the both samples. The electronic characteristics were obtained by current-voltage and capacitance-voltage measurements. Schottky diodes on sapphire substrate show breakdown voltage of -80 V. While for SiC substrate, the strong breakdown was not observed even at -100 V. The reverse leakage current of diodes based on SiC is over three orders of magnitude lower than that of sapphire substrate when the reverse voltage is above 50 V, which is due to the presence of low dislocation density and high thermal conductivity. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |