WEKO3
アイテム
{"_buckets": {"deposit": "d51ea726-d4f9-409e-86df-e09d58ee44a9"}, "_deposit": {"created_by": 3, "id": "5027", "owners": [3], "pid": {"revision_id": 0, "type": "depid", "value": "5027"}, "status": "published"}, "_oai": {"id": "oai:nitech.repo.nii.ac.jp:00005027", "sets": ["31"]}, "author_link": ["522", "4028", "16679", "4015", "16678", "13619"], "item_10001_biblio_info_28": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2002-01-01", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "1", "bibliographicPageEnd": "530", "bibliographicPageStart": "528", "bibliographicVolumeNumber": "91", "bibliographic_titles": [{"bibliographic_title": "JOURNAL OF APPLIED PHYSICS"}]}]}, "item_10001_description_36": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al0.27Ga0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 Ω, an optical output power of 20 μW, and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27°C.", "subitem_description_type": "Other"}]}, "item_10001_description_38": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_description": "application/pdf", "subitem_description_type": "Other"}]}, "item_10001_full_name_27": {"attribute_name": "著者別名", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "522", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "1000000232934", "nameIdentifierScheme": "NRID", "nameIdentifierURI": "http://rns.nii.ac.jp/nr/1000000232934"}], "names": [{"name": "江川, 孝志"}]}, {"nameIdentifiers": [{"nameIdentifier": "4028", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "神保, 孝志"}]}, {"nameIdentifiers": [{"nameIdentifier": "4015", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "梅野, 正義"}]}]}, "item_10001_publisher_29": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_10001_relation_34": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "10.1063/1.1408264"}], "subitem_relation_type": "isIdenticalTo", "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://dx.doi.org/10.1063/1.1408264", "subitem_relation_type_select": "DOI"}}]}, "item_10001_source_id_30": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "00218979", "subitem_source_identifier_type": "ISSN"}]}, "item_10001_source_id_32": {"attribute_name": "書誌レコードID(NCID)", "attribute_value_mlt": [{"subitem_source_identifier": "AA00693547", "subitem_source_identifier_type": "NCID"}]}, "item_10001_version_type_33": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Egawa, Takashi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "522", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "1000000232934", "nameIdentifierScheme": "NRID", "nameIdentifierURI": "http://rns.nii.ac.jp/nr/1000000232934"}]}, {"creatorNames": [{"creatorName": "Zhang, B.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "16678", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nishikawa, N.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "16679", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ishikawa, H.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13619", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Jimbo, Takashi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "4028", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Umeno, Masayoshi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "4015", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-01-25"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JAP 91_528.pdf", "filesize": [{"value": "63.2 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensefree": "Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 91(1), pp.528- 530 ; 2002 and may be found at http://link.aip.org/link/?jap/91/528", "licensetype": "license_free", "mimetype": "application/pdf", "size": 63200.0, "url": {"label": "本文_fulltext", "url": "https://nitech.repo.nii.ac.jp/record/5027/files/JAP 91_528.pdf"}, "version_id": "828dce73-c87b-43cf-83c4-c8be4fe774d9"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition", "subitem_title_language": "en"}]}, "item_type_id": "10001", "owner": "3", "path": ["31"], "permalink_uri": "https://nitech.repo.nii.ac.jp/records/5027", "pubdate": {"attribute_name": "公開日", "attribute_value": "2012-11-06"}, "publish_date": "2012-11-06", "publish_status": "0", "recid": "5027", "relation": {}, "relation_version_is_last": true, "title": ["InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition"], "weko_shared_id": 3}
InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition
https://nitech.repo.nii.ac.jp/records/5027
https://nitech.repo.nii.ac.jp/records/50272766c67f-7383-49f6-b212-febd4246cba0
名前 / ファイル | ライセンス | アクション |
---|---|---|
本文_fulltext (63.2 kB)
|
Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 91(1), pp.528- 530 ; 2002 and may be found at http://link.aip.org/link/?jap/91/528
|
Item type | 学術雑誌論文 / Journal Article(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2012-11-06 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Egawa, Takashi
× Egawa, Takashi× Zhang, B.× Nishikawa, N.× Ishikawa, H.× Jimbo, Takashi× Umeno, Masayoshi |
|||||
著者別名 | ||||||
姓名 | 江川, 孝志 | |||||
著者別名 | ||||||
姓名 | 神保, 孝志 | |||||
著者別名 | ||||||
姓名 | 梅野, 正義 | |||||
書誌情報 |
JOURNAL OF APPLIED PHYSICS 巻 91, 号 1, p. 528-530, 発行日 2002-01-01 |
|||||
出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00218979 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00693547 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1063/1.1408264 | |||||
関連名称 | 10.1063/1.1408264 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al0.27Ga0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 Ω, an optical output power of 20 μW, and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27°C. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |