WEKO3
アイテム
{"_buckets": {"deposit": "35e8cfc3-30c9-4026-9708-cbef55b0abbc"}, "_deposit": {"created_by": 3, "id": "5074", "owners": [3], "pid": {"revision_id": 0, "type": "depid", "value": "5074"}, "status": "published"}, "_oai": {"id": "oai:nitech.repo.nii.ac.jp:00005074", "sets": ["31"]}, "author_link": ["522", "13619", "16918", "4028"], "item_10001_biblio_info_28": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2002-07-08", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "2", "bibliographicPageEnd": "294", "bibliographicPageStart": "292", "bibliographicVolumeNumber": "81", "bibliographic_titles": [{"bibliographic_title": "APPLIED PHYSICS LETTERS"}]}]}, "item_10001_description_36": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "Structural, electrical, and optical properties of an InGaN-based light-emitting diode (LED) on an AlN/sapphire template have been studied and compared with the conventional LED properties on a sapphire substrate. In comparison to the LED on sapphire, the LED on AlN/sapphire template has shown better electrical and optical characteristics, which are due to a low threading dislocation density, high resistive, and thermal conductive AlN layer. An additional advantage is to grow a high-quality LED structure on an AlN/sapphire template without using low-temperature-grown GaN or an AlN buffer layer.", "subitem_description_type": "Other"}]}, "item_10001_description_38": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_description": "application/pdf", "subitem_description_type": "Other"}]}, "item_10001_full_name_27": {"attribute_name": "著者別名", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "522", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "1000000232934", "nameIdentifierScheme": "NRID", "nameIdentifierURI": "http://rns.nii.ac.jp/nr/1000000232934"}], "names": [{"name": "江川, 孝志"}]}, {"nameIdentifiers": [{"nameIdentifier": "4028", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "神保, 孝志"}]}]}, "item_10001_publisher_29": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_10001_relation_34": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "10.1063/1.1492857"}], "subitem_relation_type": "isIdenticalTo", "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://dx.doi.org/10.1063/1.1492857", "subitem_relation_type_select": "DOI"}}]}, "item_10001_source_id_30": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "00036951", "subitem_source_identifier_type": "ISSN"}]}, "item_10001_source_id_32": {"attribute_name": "書誌レコードID(NCID)", "attribute_value_mlt": [{"subitem_source_identifier": "AA00543432", "subitem_source_identifier_type": "NCID"}]}, "item_10001_version_type_33": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Egawa, Takashi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "522", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "1000000232934", "nameIdentifierScheme": "NRID", "nameIdentifierURI": "http://rns.nii.ac.jp/nr/1000000232934"}]}, {"creatorNames": [{"creatorName": "Omura, H.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "16918", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ishikawa, H.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13619", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Jimbo, Takashi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "4028", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-01-25"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "APL 81_292.pdf", "filesize": [{"value": "161.9 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensefree": "Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 81(2),pp.292 -294; 2002 and may be found at http://link.aip.org/link/?apl/81/292", "licensetype": "license_free", "mimetype": "application/pdf", "size": 161900.0, "url": {"label": "本文_fulltext", "url": "https://nitech.repo.nii.ac.jp/record/5074/files/APL 81_292.pdf"}, "version_id": "7ee2e98a-b630-4e2f-bbba-7061205e4549"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition", "subitem_title_language": "en"}]}, "item_type_id": "10001", "owner": "3", "path": ["31"], "permalink_uri": "https://nitech.repo.nii.ac.jp/records/5074", "pubdate": {"attribute_name": "公開日", "attribute_value": "2012-11-06"}, "publish_date": "2012-11-06", "publish_status": "0", "recid": "5074", "relation": {}, "relation_version_is_last": true, "title": ["Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition"], "weko_shared_id": 3}
Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition
https://nitech.repo.nii.ac.jp/records/5074
https://nitech.repo.nii.ac.jp/records/5074a6d62410-da05-4407-85d2-5474e65fc752
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (161.9 kB)
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Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 81(2),pp.292 -294; 2002 and may be found at http://link.aip.org/link/?apl/81/292
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2012-11-06 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Egawa, Takashi
× Egawa, Takashi× Omura, H.× Ishikawa, H.× Jimbo, Takashi |
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著者別名 | ||||||
姓名 | 江川, 孝志 | |||||
著者別名 | ||||||
姓名 | 神保, 孝志 | |||||
書誌情報 |
APPLIED PHYSICS LETTERS 巻 81, 号 2, p. 292-294, 発行日 2002-07-08 |
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出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00036951 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00543432 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1063/1.1492857 | |||||
関連名称 | 10.1063/1.1492857 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | Structural, electrical, and optical properties of an InGaN-based light-emitting diode (LED) on an AlN/sapphire template have been studied and compared with the conventional LED properties on a sapphire substrate. In comparison to the LED on sapphire, the LED on AlN/sapphire template has shown better electrical and optical characteristics, which are due to a low threading dislocation density, high resistive, and thermal conductive AlN layer. An additional advantage is to grow a high-quality LED structure on an AlN/sapphire template without using low-temperature-grown GaN or an AlN buffer layer. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |