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Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC
https://nitech.repo.nii.ac.jp/records/5093
https://nitech.repo.nii.ac.jp/records/5093f6551f4a-34e3-4467-947b-77e439306f22
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (60.8 kB)
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Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 81(16),pp.3073-3075; 2002 and may be found at http://link.aip.org/link/?apl/81/3073
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2012-11-06 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Arulkumaran, S.
× Arulkumaran, S.× Egawa, Takashi× Ishikawa, H.× Jimbo, Takashi |
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著者別名 | ||||||
姓名 | 江川, 孝志 | |||||
著者別名 | ||||||
姓名 | 神保, 孝志 | |||||
書誌情報 |
APPLIED PHYSICS LETTERS 巻 81, 号 16, p. 3073-3075, 発行日 2002-10-14 |
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出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00036951 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00543432 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1063/1.1512820 | |||||
関連名称 | 10.1063/1.1512820 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | The drain-current collapse at high drain voltage has been studied in AlGaN/GaN high-electron-mobility transistors (HEMTs) on both semi-insulating (SI)-SiC and sapphire substrates using small frequency (120 Hz) sinusoidal wave superimposed dc IDS-VDS characteristics. Low drain-current collapses were observed in AlGaN/GaN HEMTs on SI-SiC substrate when compared with the HEMTs on sapphire substrates. Two and three thermally activated deep traps were observed on SiC-based and sapphire-based HEMTs, respectively. The existence of an additional deep trap (ΔE = 0.61eV) could be associated with the material defects/ dislocations responsible for the severe drain current collapse in sapphire-based HEMTs. The white-light illuminated IDS-VDS characteristics support the existence of more number of deep traps in the sapphire-based HEMTs. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |