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Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells
https://nitech.repo.nii.ac.jp/records/5147
https://nitech.repo.nii.ac.jp/records/51476652f075-9b78-4d52-95dc-79f9d90c94ce
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (197.3 kB)
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Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 82(26),pp.4702-4704; 2003 and may be found at http://link.aip.org/link/?apl/82/4702
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2012-11-06 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Hao, M.
× Hao, M.× Ishikawa, H.× Egawa, Takashi× Shao, C. L.× Jimbo, Takashi |
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著者別名 | ||||||
姓名 | 江川, 孝志 | |||||
著者別名 | ||||||
姓名 | 神保, 孝志 | |||||
書誌情報 |
APPLIED PHYSICS LETTERS 巻 82, 号 26, p. 4702-4704, 発行日 2003-06-30 |
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出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00036951 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00543432 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1063/1.1588731 | |||||
関連名称 | 10.1063/1.1588731 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | A series of InGaN/GaN multiple quantum wells (MQWs) was grown by metalorganic chemical vapor deposition with different well thickness. High-resolution x-ray diffraction studies revealed that the In composition is increasing along the growth direction from the bottom to the top of each well layer in these MQWs. While the In composition at the bottom of each well layer almost keeps constant, the increasing rate of In composition becomes obviously larger when the growth temperature is decreased. The important conclusion of this study is that the InGaN/GaN MQWs is shaped like a triangle due to the increasing of In composition from the bottom to the top of the well layer. The emission mechanism of the InGaN/GaN MQWs has to be discussed based on the triangular band gap structure. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |