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Magnetic and magneto-dielectric properties of magneto-electric field effect capacitor using Cr2O3
https://nitech.repo.nii.ac.jp/records/5411
https://nitech.repo.nii.ac.jp/records/5411c8de45b9-16c4-4b49-9247-7a3de4689b5d
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (598.8 kB)
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(c) 2008 The Ceramic Society of Japan
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2012-11-06 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Magnetic and magneto-dielectric properties of magneto-electric field effect capacitor using Cr2O3 | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Yokota, Takeshi
× Yokota, Takeshi× Murata, Shotaro× Kuribayashi, Takaaki× Gomi, Manabu |
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著者別名 | ||||||
姓名 | 横田, 壮司 | |||||
著者別名 | ||||||
姓名 | 五味, 學 | |||||
書誌情報 |
Journal of the Ceramic Society of Japan 巻 116, 号 1359, p. 1204-1207, 発行日 2008-11-01 |
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出版者 | ||||||
出版者 | The Ceramic Society of Japan | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 18820743 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA12229489 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.2109/jcersj2.116.1204 | |||||
関連名称 | 10.2109/jcersj2.116.1204 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | We investigated the magnetic and dielectric properties of a metal (Pt)/insulator (Cr_2O_3)/magnetic floating gate (Fe)/tunnel layer (CeO_2)/semiconductor (Si) capacitor. This capacitor shows capacitance-voltage (C-V) properties typical of a Si Metal-Insulator-Semiconductor (MIS) capacitor with hysteresis, which indicates that electrons have been injected into the Fe layer. The capacitor also shows ferromagnetic properties. The C-V curve has a hysteresis window with a clockwise trace. This hysteresis behavior was changed by the application of an external magnetic field. These results indicate that this MIS capacitor contains a ferromagnetic floating gate and a magneto-electric insulating layer in a single system. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |