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Experimental determination of band offsets at the SnS/CdS and SnS/InSxOy heterojunctions
https://nitech.repo.nii.ac.jp/records/5493
https://nitech.repo.nii.ac.jp/records/549318593916-6679-4f2d-a52a-232783696710
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (188.9 kB)
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Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 107(3), pp.034507-1- 034507-5 ; 2010 and may be found at http://link.aip.org/link/?jap/107/034507
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||
| タイトル | ||||||||||
| タイトル | Experimental determination of band offsets at the SnS/CdS and SnS/InSxOy heterojunctions | |||||||||
| 言語 | en | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | journal article | |||||||||
| 著者 |
Abdel, Haleem A. M.
× Abdel, Haleem A. M.
× Ichimura, Masaya
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| 著者別名 | ||||||||||
| 姓名 | 市村, 正也 | |||||||||
| 書誌情報 |
en : JOURNAL OF APPLIED PHYSICS 巻 107, 号 3, p. 034507-1-034507-5, 発行日 2010-02-12 |
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| 出版者 | ||||||||||
| 出版者 | American Institute of Physics | |||||||||
| 言語 | en | |||||||||
| ISSN | ||||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 0021-8979 | |||||||||
| item_10001_source_id_32 | ||||||||||
| 収録物識別子タイプ | NCID | |||||||||
| 収録物識別子 | AA00693547 | |||||||||
| 出版タイプ | ||||||||||
| 出版タイプ | VoR | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||
| item_10001_relation_34 | ||||||||||
| 関連タイプ | isIdenticalTo | |||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.3294619 | |||||||||
| 関連名称 | 10.1063/1.3294619 | |||||||||
| 内容記述 | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | The semidirect x-ray photoelectron spectroscopy technique was used to measure the band alignments at the interface of heterostructures based on SnS. The layers were deposited by electrochemical deposition (ECD), chemical bath deposition (CBD), or photochemical deposition (PCD). The following four kinds of heterojunctions were characterized. (1) ECD-SnS/PCD-CdS. (2) CBD-SnS/PCD-CdS. (3) ECD-SnS/ECD-InSxOy. (4) CBD-SnS/ECD-InSxOy. The valence band offsets ΔEV of those four heterojunctions are determined to be 1.34, 1.59, 0.77, and 0.74±0.3 eV, respectively. | |||||||||
| 言語 | en | |||||||||
