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Local structural ordering in low-temperature-grown epitaxial Fe3+x Si1-x films on Ge(111)
https://nitech.repo.nii.ac.jp/records/5514
https://nitech.repo.nii.ac.jp/records/55142fb04f74-6c42-40a9-867b-1c529a6003e2
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (483.2 kB)
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Copyright(2011) The American Physical Society
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2013-05-17 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Local structural ordering in low-temperature-grown epitaxial Fe3+x Si1-x films on Ge(111) | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Hamaya, Kohei
× Hamaya, Kohei× Murakami, Tatsuhiko× Yamada, Shinya× Mibu, Ko× Miyao, Masanobu |
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著者別名 | ||||||
姓名 | 壬生, 攻 | |||||
書誌情報 |
Physical Review B 巻 83, 号 14, p. 144411-1-144411-6, 発行日 2011-04-14 |
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出版者 | ||||||
出版者 | American Physical Society | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 10980121 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA11187113 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1103/PhysRevB.83.144411 | |||||
関連名称 | 10.1103/PhysRevB.83.144411 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | For exploring group-IV semiconductor spintronics with ferromagnetic Heusler compounds, we study the local structural ordering of the stoichiometric Fe 3Si and off-stoichiometric Fe 3.2Si 0.8 films epitaxially grown on Ge(111) at a very low temperature of 130 ?C. Analyzing their Fe57 Mossbauer spectra, we can discuss the site occupation of Fe atoms in the films grown directly on a semiconductor substrate, where the influence of the interfacial reactions between Fe 3Si or Fe 3.2Si 0.8 and Ge on the Mossbauer spectra is minimized. As a result, we can quantitatively obtain the local degree of the D0 3 ordering (?67%) for the as-grown stoichiometric films, whereas we can not see the structural ordering for the as-grown off-stoichiometric films. Comparing the analytic data between as-grown and annealed films, we find that the postannealing can act effectively on the improvement of the structural ordering only for the off-stoichiometric films. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |