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Sign change of tunnel magnetoresistance ratio with temperature in epitaxial Fe/MgO/Co2MnSn magnetic tunnel junctions
https://nitech.repo.nii.ac.jp/records/5528
https://nitech.repo.nii.ac.jp/records/552873f4b665-7834-4fdc-8831-d9f961f87508
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (1.6 MB)
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Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 110, 073905 ; 2011 and may be found at http://dx.doi.org/10.1063/1.3642963
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2013-04-01 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Sign change of tunnel magnetoresistance ratio with temperature in epitaxial Fe/MgO/Co2MnSn magnetic tunnel junctions | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Tanaka, Masaaki
× Tanaka, Masaaki× Hori, T.× Mibu, Ko× Kondou, Kouta× Ono, Teruo× Kasai, Shinya× Asaka, Toru× Inoue, JunIchiro |
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著者別名 | ||||||
姓名 | 田中, 雅章 | |||||
著者別名 | ||||||
姓名 | 壬生, 攻 | |||||
著者別名 | ||||||
姓名 | 浅香, 透 | |||||
書誌情報 |
Journal of Applied Physics 巻 110, 号 7, p. 073905-1-073905-8, 発行日 2011-05-15 |
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出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00218979 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00693547 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1063/1.3642963 | |||||
関連名称 | 10.1063/1.3642963 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | Bias-voltage dependence of tunnel magnetoresistance (TMR) was investigated for epitaxial magnetic tunnel junctions of Fe/MgO/Co2MnSn at various temperatures. The magnetoresistance measurement showed sign change of TMR ratio as a function of bias voltage. Sign change in TMR effect was also observed with changing temperature at a fixed bias voltage around 0 mV. These tunneling behaviors can be explained by a modified Julliere’s model adopting an interaction between tunnel electrons and localized spins of magnetic impurities within the tunnel barrier. The temperature dependent sign change was qualitatively explained by the theoretical calculation. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |