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Analyses of hetero-interface trapping properties in AlGaN/GaN high electron mobility transistor heterostructures grown on silicon with thick buffer layers
https://nitech.repo.nii.ac.jp/records/5668
https://nitech.repo.nii.ac.jp/records/566804cb76ee-8902-486d-b3de-6d0c9fc6d8db
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (705.5 kB)
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(c) 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied Physics Letters, 101, 013506 ; 2012 and may be found at http://dx.doi.org/10.1063/1.4733359
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2015-06-11 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Analyses of hetero-interface trapping properties in AlGaN/GaN high electron mobility transistor heterostructures grown on silicon with thick buffer layers | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Freedsman, Joseph J.
× Freedsman, Joseph J.× Kubo, Toshiharu× Egawa, Takashi |
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著者別名 | ||||||
姓名 | 久保, 俊晴 | |||||
著者別名 | ||||||
姓名 | 江川, 孝志 | |||||
書誌情報 |
Applied Physics Letters 巻 101, 号 1, p. 013506-1-013506-4, 発行日 2012-07-02 |
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出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00036951 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00543431 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1063/1.4733359 | |||||
関連名称 | 10.1063/1.4733359 | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |