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Effect of buffer layer structure on the structural properties of GaAs epitaxial layers grown on GaP substrate
https://nitech.repo.nii.ac.jp/records/6613
https://nitech.repo.nii.ac.jp/records/66131b14cabf-ec3c-4e22-a82b-3e22db3d63dc
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (1.1 MB)
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(C)2019. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2020-08-21 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Effect of buffer layer structure on the structural properties of GaAs epitaxial layers grown on GaP substrate | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Imaizumi, Mitsuru
× Imaizumi, Mitsuru× Hirotani, Masumi× Soga, Tetsuo× Umeno, Masayoshi |
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著者別名 | ||||||
姓名 | 曾我, 哲夫 | |||||
書誌情報 |
en : Journal of Crystal Growth 巻 507, p. 288-294, 発行日 2019-02-01 |
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出版者 | ||||||
出版者 | Elsevier | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00220248 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00696341 | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1016/j.jcrysgro.2018.11.010 | |||||
関連名称 | 10.1016/j.jcrysgro.2018.11.010 | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |