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Design and material growth of AlGaN-channel two-dimensional-electron gas heterostructures employing strain-controlled quaternary AlGaInN barrier layers
https://nitech.repo.nii.ac.jp/records/6671
https://nitech.repo.nii.ac.jp/records/6671472c5745-7ea1-4f05-9c75-c2ca263e6edb
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (510.7 kB)
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(C)2018 The Japan Society of Applied Physics
第三者による著作物の利用は,私的利用(著作権法第30条)および引用(著作権法第32条)の範囲内に限られる。 |
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2021-02-03 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Design and material growth of AlGaN-channel two-dimensional-electron gas heterostructures employing strain-controlled quaternary AlGaInN barrier layers | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Hosomi, Daiki
× Hosomi, Daiki× Chen, Heng× Egawa, Takashi× Miyoshi, Makoto |
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著者別名 | ||||||
姓名 | 江川, 孝志 | |||||
著者別名 | ||||||
姓名 | 三好, 実人 | |||||
書誌情報 |
en : Japanese Journal of Applied Physics 巻 58, 号 1, p. 011004, 発行日 2019-01 |
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出版者 | ||||||
出版者 | Japan Society of Applied Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00214922 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA12295836 | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.7567/1347-4065/aaed2f | |||||
関連名称 | 10.7567/1347-4065/aaed2f | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |