{"created":"2023-05-15T12:33:33.663552+00:00","id":1597,"links":{},"metadata":{"_buckets":{"deposit":"7e566b8a-f4a5-4298-886f-af11e1b3fd2d"},"_deposit":{"created_by":3,"id":"1597","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"1597"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00001597","sets":["330:335"]},"author_link":["4365","4364","4363"],"item_9_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"シリコン（111)基板上窒化ガリウム系発光デバイスの特性改善に関する研究"}]},"item_9_biblio_info_5":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2010-03","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"104","bibliographicPageStart":"1","bibliographicVolumeNumber":"7","bibliographic_titles":[{"bibliographic_title":"極微デバイス機能システム研究センター報告書 = Technical report at Research Center for Nano-Device and System"}]}]},"item_9_description_11":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_9_full_name_4":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"4364","nameIdentifierScheme":"WEKO"}],"names":[{"name":"名古屋工業大学, 極微デバイス機能システム研究センター"}]},{"nameIdentifiers":[{"nameIdentifier":"4365","nameIdentifierScheme":"WEKO"}],"names":[{"name":"ナゴヤコウギョウダイ, ガクゴクビデバイスキノウシステムケンキュウセンター"}]}]},"item_9_publisher_6":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"名古屋工業大学極微デバイス機能システム研究センター"}]},"item_9_source_id_8":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA12036883","subitem_source_identifier_type":"NCID"}]},"item_9_version_type_9":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Research, Center for Nano-Device and System Nagoya Institute of Technology","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-12-06"}],"displaytype":"detail","filename":"trnit2010_1-40.pdf","filesize":[{"value":"1.5 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/1597/files/trnit2010_1-40.pdf"},"version_id":"be6ad573-763f-4a52-90b6-9233fd8988b2"},{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-12-06"}],"displaytype":"detail","filename":"trnit2010_41-86.pdf","filesize":[{"value":"2.9 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/1597/files/trnit2010_41-86.pdf"},"version_id":"02d6dfd6-3888-44d7-9512-de31ab2a7cec"},{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-12-06"}],"displaytype":"detail","filename":"trnit2010_87-104.pdf","filesize":[{"value":"806.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/1597/files/trnit2010_87-104.pdf"},"version_id":"f64b1559-6261-4484-b60a-f40eca5d1c96"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Reserch on improvement of GaN-based light emitting devices grown on silicon (111) substrate","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Reserch on improvement of GaN-based light emitting devices grown on silicon (111) substrate","subitem_title_language":"en"}]},"item_type_id":"9","owner":"3","path":["335"],"pubdate":{"attribute_name":"公開日","attribute_value":"2011-08-01"},"publish_date":"2011-08-01","publish_status":"0","recid":"1597","relation_version_is_last":true,"title":["Reserch on improvement of GaN-based light emitting devices grown on silicon (111) substrate"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-05-15T14:31:50.616954+00:00"}