{"created":"2023-05-15T12:34:05.905437+00:00","id":2246,"links":{},"metadata":{"_buckets":{"deposit":"b4b79a87-a10e-4e63-81c4-bc6388d82c44"},"_deposit":{"created_by":3,"id":"2246","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"2246"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00002246","sets":["399:403"]},"author_link":["6209","6213","6247","6246"],"item_9_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"タイヨウ　デンチ　ヨウ　コウジュンド　シリコン　ノ　アタラシイ　セイゾウホウ　（５）"},{"subitem_alternative_title":"A Novel Fabrication Technique of High-Purity Silicon for Solar Cell Application (V)"}]},"item_9_biblio_info_5":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2009-03-31","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"6","bibliographicPageStart":"1","bibliographicVolumeNumber":"8","bibliographic_titles":[{"bibliographic_title":"セラミックス基盤工学研究センター年報 = Annual report of the Ceramics Research Laboratory Nagoya Institute of Technology"}]}]},"item_9_description_10":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"四塩化珪素の亜鉛還元法による高純度シリコン製造プロセスに関して名古屋工業大学セラミックス基盤工学研究センターで行われた2008年度の研究成果を報告する。今年度は、亜鉛と四塩化珪素の連続供給による連続運転、水平反応管におけるシリコンの生成、垂直反応管における生成物と排ガスとの分離、垂直反応管の下部末端に置いた坩堝における生成シリコンの収集等を念頭において研究を行った。亜鉛供給法に関しては、１）予め溶融した亜鉛をオーバーフロー方式で亜鉛蒸発槽に送る方式、および２）亜鉛ワイヤーを直接、溶融気化容器に送り込む方式の二種類について検討をおこなった。シリコンの生成に関しては、蒸発容器に送り込まれた亜鉛を気化し、液状で供給される四塩化珪素と直接反応するような装置上の工夫を試みた。反応管各部の温度を種々に設定し、水平および垂直反応管の各領域で採集した反応生成物の形態と量を調べた。生成物のキャラクタリゼーションに関しては顕微鏡観察、単結晶X線回析測定、および粉末X線回析測定を行った。Fiscal 2008 year achievements at Ceramics Research Laboratory, Nagoya Institute of Technology, on the fabrication ofthe high-purity silicon for solar-cell applications based on the reduction technique of silicon tetrachloride by zinc havebeen reported. The aims of this year were taken at the continuous operation based on the successive supply of rawmaterials, nucleation and growth of silicon particles in the horizontal reaction tube, separation of silicon particles fromexhaust gas in the vertical reaction tube, and accumulation of silicon products in a crucible placed at the bottom of thevertical tube. Two methods were examined on the successive zinc supply, 1) transfer of zinc melt into the evaporationvessel by the overflow mechanism, 2) direct supply of zinc wire into a single vessel that functions both melting andevaporation. A direct reaction between the silicon tetrachloride in liquid form and zinc vapor was attempted through thecontrivance in design of the reaction apparatus. The system was operated at controlled temperatures over various blocksof reaction tubes. Shapes and amounts of the reaction products found at these blocks were examined. Microscopicobservations, and single-crystal and powder diffraction studies were carried out for the characterization of products.","subitem_description_type":"Other"}]},"item_9_description_11":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_9_full_name_4":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"6213","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Wang, Jun"}]},{"nameIdentifiers":[{"nameIdentifier":"6209","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Ishizawa, Nobuo"}]},{"nameIdentifiers":[{"nameIdentifier":"6246","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Li, Pengfei"}]}]},"item_9_heading_13":{"attribute_name":"見出し","attribute_value_mlt":[{"subitem_heading_banner_headline":"<論文>","subitem_heading_language":"ja"},{"subitem_heading_banner_headline":"<Paper>","subitem_heading_language":"en"}]},"item_9_publisher_6":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"名古屋工業大学セラミックス基盤工学研究センター"}]},"item_9_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"13471694","subitem_source_identifier_type":"ISSN"}]},"item_9_source_id_8":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11625130","subitem_source_identifier_type":"NCID"}]},"item_9_version_type_9":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"王, 俊"},{"creatorName":"イシザワ, ノブオ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"石澤, 伸夫"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"李, 鵬飛"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"島宗, 孝之"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-12-07"}],"displaytype":"detail","filename":"arnit2008_1-6.pdf","filesize":[{"value":"733.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/2246/files/arnit2008_1-6.pdf"},"version_id":"b7aea9ba-e10d-4f05-a4ba-47169d2805b7"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"太陽電池用高純度シリコンの新しい製造法（V)","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"太陽電池用高純度シリコンの新しい製造法（V)"}]},"item_type_id":"9","owner":"3","path":["403"],"pubdate":{"attribute_name":"公開日","attribute_value":"2011-08-10"},"publish_date":"2011-08-10","publish_status":"0","recid":"2246","relation_version_is_last":true,"title":["太陽電池用高純度シリコンの新しい製造法（V)"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-05-16T15:25:23.841781+00:00"}