{"created":"2023-05-15T12:34:06.517752+00:00","id":2261,"links":{},"metadata":{"_buckets":{"deposit":"a9a702b4-59a2-4138-8923-59de342149d7"},"_deposit":{"created_by":91,"id":"2261","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"2261"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00002261","sets":["399:404"]},"author_link":["6214"],"control_number":"2261","item_9_biblio_info_5":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008-03-31","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"21","bibliographicPageStart":"17","bibliographicVolumeNumber":"7","bibliographic_titles":[{"bibliographic_title":"セラミックス基盤工学研究センター年報","bibliographic_titleLang":"ja"},{"bibliographic_title":"Annual report of the Ceramics Research Laboratory Nagoya Institute of Technology","bibliographic_titleLang":"en"}]}]},"item_9_description_10":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"四塩化ケイ素の亜鉛還元による高純度シリコン製造プロセスに関する2007 年度の研究成果を報告する。今年度は，反応塔内のガス圧を大気に対してわずかな正圧を保持すること，原料供給量の増量，合成シリコンの収率の増加などを念頭において実験を行った。まず，条件として，四塩化ケイ素を液状のまま反応に供することを試みた。更に，シリコン結晶の系内における成長条件の検討を行った。液状四塩化ケイ素の直接投入は反応を安定させた。本実験で行った濃厚雰囲気下におけるシリコンの生産量は，直径わずか30mm の反応管であるにもかかわらず，連続運転を仮定すると年2 トンに相当する。また，反応管内の温度制御を工夫することにより，シリコンの粒成長を制御できる可能性を見いだした。今後は連続運転プロセスの改善と生成シリコンの純度向上を目指す。","subitem_description_language":"ja","subitem_description_type":"Other"},{"subitem_description":"New reactor system for the synthesis of high-purity silicon for solar-cell application was investigated in order to realize continuousand stable operations under well-defined conditions. New experimental conditions, where SiCl4 liquid was directly supplied to thehigh temperature reactor, were examined together with the reactor temperature and its distribution. Reactors with two differentlengths were constructed for this purpose. It was found that a high production capacity of approximately 2 ton-Si/ year was possibleunder continuous operation using a tube reactor of only 30 mm in diameter. Grain growth control of silicon was also examinedsuccessfully. Refinement of the process conditions and improvement of the purity of silicon are the future subjects.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_9_heading_13":{"attribute_name":"見出し","attribute_value_mlt":[{"subitem_heading_banner_headline":"<論文>","subitem_heading_language":"ja"},{"subitem_heading_banner_headline":"<Paper>","subitem_heading_language":"en"}]},"item_9_publisher_6":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"名古屋工業大学セラミックス基盤工学研究センター","subitem_publisher_language":"ja"}]},"item_9_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1347-1694","subitem_source_identifier_type":"PISSN"}]},"item_9_source_id_8":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11625130","subitem_source_identifier_type":"NCID"}]},"item_9_version_type_9":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"石澤, 伸夫","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"日比野, 寿","creatorNameLang":"ja"},{"creatorName":"ヒビノ, ヒサシ","creatorNameLang":"ja-Kana"},{"creatorName":"Hibino, Hisashi","creatorNameLang":"en"}],"familyNames":[{"familyName":"日比野","familyNameLang":"ja"},{"familyName":"ヒビノ","familyNameLang":"ja-Kana"},{"familyName":"Hibino","familyNameLang":"en"}],"givenNames":[{"givenName":"寿","givenNameLang":"ja"},{"givenName":"ヒサシ","givenNameLang":"ja-Kana"},{"givenName":"Hisashi","givenNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"6214","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"荒木, 規","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"島宗, 孝之","creatorNameLang":"ja"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-12-07"}],"displaytype":"detail","filename":"arnit2007_17-21.pdf","filesize":[{"value":"469.9 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","objectType":"fulltext","url":"https://nitech.repo.nii.ac.jp/record/2261/files/arnit2007_17-21.pdf"},"version_id":"9ea71ad2-f1ea-4f2e-aa64-4062846b6af8"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"太陽電池用高純度シリコンの新しい製造法（Ⅳ）","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"太陽電池用高純度シリコンの新しい製造法（Ⅳ）","subitem_title_language":"ja"},{"subitem_title":"タイヨウ　デンチ　ヨウ　コウジュンド　シリコン　ノ　アタラシイ　セイゾウホウ　（４）","subitem_title_language":"ja-Kana"},{"subitem_title":"A Novel Fabrication Technique of High-Purity Silicon for Solar Cell Application (IV)","subitem_title_language":"en"}]},"item_type_id":"9","owner":"91","path":["404"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2011-08-10"},"publish_date":"2011-08-10","publish_status":"0","recid":"2261","relation_version_is_last":true,"title":["太陽電池用高純度シリコンの新しい製造法（Ⅳ）"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2024-11-26T04:52:47.447300+00:00"}