@article{oai:nitech.repo.nii.ac.jp:00002265,
 author = {山口, 幸男 and 佐藤, 誠},
 journal = {セラミックス基盤工学研究センター年報 = Annual report of the Ceramics Research Laboratory Nagoya Institute of Technology},
 month = {Mar},
 note = {In recent years, the single-crystal silicon carbide (SiC) attracts attention as a substrate of a power device or LED. The single-crystalSiC becomes a substrate through various processing processes. At a back process, polishing process is needed. Conventionally, afinal polishing of single-crystal SiC was performed by loose abrasive grain polishing. However, the removal rate of polishing waslow. This was set to one of the causes of a cost rise of the single-crystal SiC wafer. In this research, the polishing examinationwas performed using the advanced-type Loosely Held Abrasive (LHA) pad which is a polishing pad involving abrasive grains,and water or a polishing lubricant containing the additive agent was supplyied in order to improve the polishing process. Whenthis process is introduced into polishing process of the single-crystal SiC, polishing process in a short time is attained and thereis possibility of a cost cut. It leads to the spread of future single-crystal SiC wafers., application/pdf},
 pages = {49--53},
 title = {砥粒内包工具によるSiC単結晶の研磨の試み},
 volume = {7},
 year = {2008},
 yomi = {ヤマグチ, ユキオ}
}