{"created":"2023-05-15T12:34:06.682385+00:00","id":2265,"links":{},"metadata":{"_buckets":{"deposit":"bdff34e1-54be-48b4-98a4-52a107cacd3f"},"_deposit":{"created_by":3,"id":"2265","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"2265"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00002265","sets":["399:404"]},"author_link":["6308","6309","6307"],"item_9_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"トリュウ　ナイホウ　コウグ　ニヨル　ＳｉＣ　タンケッショウ　ノ　ケンマ　ノ　ココロミ"},{"subitem_alternative_title":"The Trial of Polishing of the Single-Crystal Silicon Carbide (SiC) by an Abrasive Grain Intension Polishing Pad"}]},"item_9_biblio_info_5":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008-03-31","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"53","bibliographicPageStart":"49","bibliographicVolumeNumber":"7","bibliographic_titles":[{"bibliographic_title":"セラミックス基盤工学研究センター年報 = Annual report of the Ceramics Research Laboratory Nagoya Institute of Technology"}]}]},"item_9_description_10":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"In recent years, the single-crystal silicon carbide (SiC) attracts attention as a substrate of a power device or LED. The single-crystalSiC becomes a substrate through various processing processes. At a back process, polishing process is needed. Conventionally, afinal polishing of single-crystal SiC was performed by loose abrasive grain polishing. However, the removal rate of polishing waslow. This was set to one of the causes of a cost rise of the single-crystal SiC wafer. In this research, the polishing examinationwas performed using the advanced-type Loosely Held Abrasive (LHA) pad which is a polishing pad involving abrasive grains,and water or a polishing lubricant containing the additive agent was supplyied in order to improve the polishing process. Whenthis process is introduced into polishing process of the single-crystal SiC, polishing process in a short time is attained and thereis possibility of a cost cut. It leads to the spread of future single-crystal SiC wafers.","subitem_description_type":"Other"}]},"item_9_description_11":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_9_full_name_4":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"6309","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Yamaguchi, Yukio"}]}]},"item_9_heading_13":{"attribute_name":"見出し","attribute_value_mlt":[{"subitem_heading_banner_headline":"<総説>","subitem_heading_language":"ja"},{"subitem_heading_banner_headline":"<Review>","subitem_heading_language":"en"}]},"item_9_publisher_6":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"名古屋工業大学セラミックス基盤工学研究センター"}]},"item_9_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"13471694","subitem_source_identifier_type":"ISSN"}]},"item_9_source_id_8":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11625130","subitem_source_identifier_type":"NCID"}]},"item_9_version_type_9":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"山口, 幸男"},{"creatorName":"ヤマグチ, ユキオ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"佐藤, 誠"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-12-07"}],"displaytype":"detail","filename":"arnit2007_49-53.pdf","filesize":[{"value":"1.1 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/2265/files/arnit2007_49-53.pdf"},"version_id":"91ac0096-a783-47b1-adad-5bad542d4db3"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"砥粒内包工具によるSiC単結晶の研磨の試み","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"砥粒内包工具によるSiC単結晶の研磨の試み"}]},"item_type_id":"9","owner":"3","path":["404"],"pubdate":{"attribute_name":"公開日","attribute_value":"2011-08-10"},"publish_date":"2011-08-10","publish_status":"0","recid":"2265","relation_version_is_last":true,"title":["砥粒内包工具によるSiC単結晶の研磨の試み"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-05-16T15:24:55.241183+00:00"}