{"created":"2023-05-15T12:34:06.967301+00:00","id":2272,"links":{},"metadata":{"_buckets":{"deposit":"109f1457-386a-40c1-8bd0-51fb0c7690fc"},"_deposit":{"created_by":91,"id":"2272","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"2272"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00002272","sets":["399:405"]},"author_link":["6214"],"item_9_biblio_info_5":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2007-03-31","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"18","bibliographicPageStart":"12","bibliographicVolumeNumber":"6","bibliographic_titles":[{"bibliographic_title":"セラミックス基盤工学研究センター年報","bibliographic_titleLang":"ja"},{"bibliographic_title":"Annual report of the Ceramics Research Laboratory Nagoya Institute of Technology","bibliographic_titleLang":"en"}]}]},"item_9_description_10":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"A new high-temperature diffraction system has been developed to collect accurate and precise single-crystal diffraction data at high resolution levels. The high-temperature apparatus is composed of two devices of a hot nitrogen gas blower and its duct which are located very close to the specimen so as to avoid heat dissipation to the other parts. The apparatus is attached to the CCD diffractometer to enable fast data collection at high temperatures up to over 1000 oC with a stability of less than 1 oC. The apparatus places no geometrical restriction to the diffractometer, allowing measurements up to 120o in 2θ. High temperature diffraction data were collected for the α-Al2O3 single crystal at 300, 600 and 900 oC within 3 hours for each measurements. The merge R factors were less than 0.019 and the final agreement factors between Fo and Fc were less than 0.031 in the range 1o < 2θ < 92o. The Al atom was found to be gradually displaced with increasing temperature so that the Al-Al repulsion force across a pair of face-sharing octahedra can relax. The system will contribute to the electron density studies of functionally important inorganic materials at elevated temperatures.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_9_heading_13":{"attribute_name":"見出し","attribute_value_mlt":[{"subitem_heading_banner_headline":"<論文>","subitem_heading_language":"ja"},{"subitem_heading_banner_headline":"<Paper>","subitem_heading_language":"en"}]},"item_9_publisher_6":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"名古屋工業大学セラミックス基盤工学研究センター","subitem_publisher_language":"ja"}]},"item_9_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1347-1694","subitem_source_identifier_type":"PISSN"}]},"item_9_source_id_8":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11625130","subitem_source_identifier_type":"NCID"}]},"item_9_version_type_9":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"石澤, 伸夫","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"近藤, 早","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"日比野, 寿","creatorNameLang":"ja"},{"creatorName":"ヒビノ, ヒサシ","creatorNameLang":"ja-Kana"},{"creatorName":"Hibino, Hisashi","creatorNameLang":"en"}],"familyNames":[{"familyName":"日比野","familyNameLang":"ja"},{"familyName":"ヒビノ","familyNameLang":"ja-Kana"},{"familyName":"Hibino","familyNameLang":"en"}],"givenNames":[{"givenName":"寿","givenNameLang":"ja"},{"givenName":"ヒサシ","givenNameLang":"ja-Kana"},{"givenName":"Hisashi","givenNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"6214","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"五十嵐, 眞悦","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"中村, 光雄","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"佐保, 良二","creatorNameLang":"ja"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-12-07"}],"displaytype":"detail","filename":"arnit2006_12-18.pdf","filesize":[{"value":"1.0 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","objectType":"fulltext","url":"https://nitech.repo.nii.ac.jp/record/2272/files/arnit2006_12-18.pdf"},"version_id":"124f022f-3129-40f8-955a-2e6895a7c36f"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Development of High-Temperature Single-Crystal X-ray Diffraction System for Electron Density Distribution Analyses","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Development of High-Temperature Single-Crystal X-ray Diffraction System for Electron Density Distribution Analyses","subitem_title_language":"en"},{"subitem_title":"電子密度分布解析用高温単結晶 X 線回折システムの開発","subitem_title_language":"ja"}]},"item_type_id":"9","owner":"91","path":["405"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2011-08-09"},"publish_date":"2011-08-09","publish_status":"0","recid":"2272","relation_version_is_last":true,"title":["Development of High-Temperature Single-Crystal X-ray Diffraction System for Electron Density Distribution Analyses"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2024-11-29T00:22:42.792920+00:00"}