{"created":"2023-05-15T12:34:07.215490+00:00","id":2278,"links":{},"metadata":{"_buckets":{"deposit":"ab0db173-6dbb-41da-a949-0b17c1893177"},"_deposit":{"created_by":3,"id":"2278","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"2278"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00002278","sets":["399:405"]},"author_link":["6286","6209","6365","6364"],"item_9_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"タイヨウ　デンチ　ヨウ　コウジュンド　シリコン　ノ　アタラシイ　セイゾウホウ　（３）"},{"subitem_alternative_title":"A Novel Fabrication Teｃhnique of High-Purity Silicon for Solar Cell Application (Ⅲ)"}]},"item_9_biblio_info_5":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2007-03-31","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"55","bibliographicPageStart":"51","bibliographicVolumeNumber":"6","bibliographic_titles":[{"bibliographic_title":"セラミックス基盤工学研究センター年報 = Annual report of the Ceramics Research Laboratory Nagoya Institute of Technology"}]}]},"item_9_description_10":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"四塩化ケイ素の亜鉛還元による高純度シリコン製造プロセスについて2006年度の実験結果を報告する。今年度はシリコンの生成条件をより高度に制御し、工業化の可能性を見出すことを目的として、水平型反応塔装置と改良版小型反応塔装置の二種類の反応装置を試作し、シリコンの製造条件について検討を行った。結果はあまり芳しいものではなく、前年度にくらべて大きな進捗は見られなかった。これは主として亜鉛ガスと四塩化ケイ素ガスの供給のタイミングの制御の難しさに起因しており、今後の課題である。New reactor system for the synthesis of high-purity silicon for solar-cell use was investigated in order to realize continuous and stable operations under well-defined conditions. Two types of reactor systems with the horizontal-type reaction chamber and the improved small reaction chamber were constructed. Both systems were operated by transferring SiCl4 into high-temperature reaction chamber filled with zinc gas to form Si and ZnCl2. The simultaneous transfer of SiCl4 and zinc gases into the chamber was desirable but often hindered because of the difficulty in detecting the timing of gas generation. Further endeavours regarding the experimental setup and optimization of operation conditions are necessary for future development.","subitem_description_type":"Other"}]},"item_9_description_11":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_9_full_name_4":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"6286","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Araki, Tadashi"}]},{"nameIdentifiers":[{"nameIdentifier":"6209","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Ishizawa, Nobuo"}]}]},"item_9_heading_13":{"attribute_name":"見出し","attribute_value_mlt":[{"subitem_heading_banner_headline":"<技術報告>","subitem_heading_language":"ja"},{"subitem_heading_banner_headline":"<Technical Report>","subitem_heading_language":"en"}]},"item_9_publisher_6":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"名古屋工業大学セラミックス基盤工学研究センター"}]},"item_9_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"13471694","subitem_source_identifier_type":"ISSN"}]},"item_9_source_id_8":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11625130","subitem_source_identifier_type":"NCID"}]},"item_9_version_type_9":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"荒木, 規"},{"creatorName":"アラキ, タダシ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"石澤, 伸夫"},{"creatorName":"イシザワ, ノブオ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"島宗, 孝之"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"榊, 大介"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-12-07"}],"displaytype":"detail","filename":"arnit2006_51-55.pdf","filesize":[{"value":"1.2 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/2278/files/arnit2006_51-55.pdf"},"version_id":"43e1c4b4-787e-4f77-a600-beea9a1e4d8a"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"太陽電池用高純度シリコンの新しい製造法（Ⅲ）","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"太陽電池用高純度シリコンの新しい製造法（Ⅲ）"}]},"item_type_id":"9","owner":"3","path":["405"],"pubdate":{"attribute_name":"公開日","attribute_value":"2011-08-09"},"publish_date":"2011-08-09","publish_status":"0","recid":"2278","relation_version_is_last":true,"title":["太陽電池用高純度シリコンの新しい製造法（Ⅲ）"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-05-16T15:24:35.042634+00:00"}