@article{oai:nitech.repo.nii.ac.jp:00002287,
 author = {石澤, 伸夫 and 佐藤, 秀範 and 島宗, 孝之},
 journal = {セラミックス基盤工学研究センター年報 = Annual report of the Ceramics Research Laboratory Nagoya Institute of Technology},
 month = {Mar},
 note = {The technique to synthesize silicon from silicon tetrachloride by reduction reaction with zinc at high temperatures wasre-examined for the purpose of providing high-purity silicon materials for silicon solar-cell industries. The new findingswhich should be added to our previous paper (Annual Report of the Ceramics Research Laboratory, Vol. 4, p37-42,2005) are as follows: 1) Single-crystal silicon fibers can be best grown at 1200 °C or lower temperatures. 2) The Zn andSiCl4 vapors would be better reacted in the temperature range 1200-1250 °C. 3) The present intermittent injectionmethod of SiCl4 tends to cause an abrupt backward-flow of air from the exhaust gas outlet into the reaction furnace dueto a large difference in the vapor pressure of species and their volumetric change in the reduction reaction, and shouldbe replaced with a method allowing a continuous injection., application/pdf},
 pages = {41--46},
 title = {太陽電池用高純度シリコンの新しい製造法（II）},
 volume = {5},
 year = {2006},
 yomi = {イシザワ, ノブオ}
}