{"created":"2023-05-15T12:34:07.592429+00:00","id":2287,"links":{},"metadata":{"_buckets":{"deposit":"763b1539-13f6-48de-b6bf-6b1ad33b3b4e"},"_deposit":{"created_by":3,"id":"2287","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"2287"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00002287","sets":["399:406"]},"author_link":["6394","6209","6393"],"item_9_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"タイヨウ　デンチ　ヨウ　コウジュンド　シリコン　ノ　アタラシイ　セイゾウホウ"},{"subitem_alternative_title":"A Novel Fabrication Technique of High-Purity Silicon for Solar Cell Application. II."}]},"item_9_biblio_info_5":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006-03-31","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"46","bibliographicPageStart":"41","bibliographicVolumeNumber":"5","bibliographic_titles":[{"bibliographic_title":"セラミックス基盤工学研究センター年報 = Annual report of the Ceramics Research Laboratory Nagoya Institute of Technology"}]}]},"item_9_description_10":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"The technique to synthesize silicon from silicon tetrachloride by reduction reaction with zinc at high temperatures wasre-examined for the purpose of providing high-purity silicon materials for silicon solar-cell industries. The new findingswhich should be added to our previous paper (Annual Report of the Ceramics Research Laboratory, Vol. 4, p37-42,2005) are as follows: 1) Single-crystal silicon fibers can be best grown at 1200 °C or lower temperatures. 2) The Zn andSiCl4 vapors would be better reacted in the temperature range 1200-1250 °C. 3) The present intermittent injectionmethod of SiCl4 tends to cause an abrupt backward-flow of air from the exhaust gas outlet into the reaction furnace dueto a large difference in the vapor pressure of species and their volumetric change in the reduction reaction, and shouldbe replaced with a method allowing a continuous injection.","subitem_description_type":"Other"}]},"item_9_description_11":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_9_full_name_4":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"6209","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Ishizawa, Nobuo"}]}]},"item_9_heading_13":{"attribute_name":"見出し","attribute_value_mlt":[{"subitem_heading_banner_headline":"<技術報告>","subitem_heading_language":"ja"},{"subitem_heading_banner_headline":"<Technical Report>","subitem_heading_language":"en"}]},"item_9_publisher_6":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"名古屋工業大学セラミックス基盤工学研究センター"}]},"item_9_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"13471694","subitem_source_identifier_type":"ISSN"}]},"item_9_source_id_8":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11625130","subitem_source_identifier_type":"NCID"}]},"item_9_version_type_9":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"石澤, 伸夫"},{"creatorName":"イシザワ, ノブオ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"佐藤, 秀範"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"島宗, 孝之"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-12-07"}],"displaytype":"detail","filename":"arnit2005_41-46.pdf","filesize":[{"value":"718.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/2287/files/arnit2005_41-46.pdf"},"version_id":"fd8fb440-fa00-410b-aaeb-4f07c241fa8e"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"太陽電池用高純度シリコンの新しい製造法（II）","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"太陽電池用高純度シリコンの新しい製造法（II）"}]},"item_type_id":"9","owner":"3","path":["406"],"pubdate":{"attribute_name":"公開日","attribute_value":"2011-08-08"},"publish_date":"2011-08-08","publish_status":"0","recid":"2287","relation_version_is_last":true,"title":["太陽電池用高純度シリコンの新しい製造法（II）"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-05-16T15:24:15.770545+00:00"}