{"created":"2023-05-15T12:34:10.430635+00:00","id":2384,"links":{},"metadata":{"_buckets":{"deposit":"b52177ad-1d9d-4efa-86ad-07be49b01ed3"},"_deposit":{"created_by":3,"id":"2384","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"2384"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00002384","sets":["418:419"]},"author_link":["31","30","6627"],"item_9_biblio_info_5":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2015-07-31","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"10","bibliographicPageStart":"5","bibliographicVolumeNumber":"3","bibliographic_titles":[{"bibliographic_title":"名古屋工業大学先進セラミックス研究センター年報 = Annual report Advanced Ceramics Research Center Nagoya Institute of Technology"}]}]},"item_9_description_10":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Silicon carbide (SiC) is a promising ceramic for various industrial applications thanks to its excellent properties at high temperature, high power, high frequency, high radiation environment and chemically harsh conditions. Substantial efforts have been made to develop new approaches to the synthesis of SiC and its nanostructures. Nanostructured SiC including nanoparticles and one-dimensional (1D) structures are superior to their bulk counterpart in many properties, and have attracted considerable attention in recent years due to their important role in basic science and their potential applications in electronic and optoelectronic devices, and composite reinforcement. This paper outlines the various methods for fabricating SiC nanostructures.","subitem_description_type":"Other"}]},"item_9_description_11":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_9_full_name_4":{"attribute_name":"著者別名","attribute_value_mlt":[{"affiliations":[{"affiliationNames":[{"affiliationName":"","lang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"","nameIdentifierScheme":"ISNI","nameIdentifierURI":"http://www.isni.org/isni/"}]}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{"nameIdentifier":"30","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030571426","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030571426"}],"names":[{"name":"Shirai, Takashi","nameLang":"en"},{"name":"白井, 孝","nameLang":"ja"},{"name":"シライ, タカシ","nameLang":"ja-Kana"}]},{"affiliations":[{"affiliationNames":[{"affiliationName":"","lang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"","nameIdentifierScheme":"ISNI","nameIdentifierURI":"http://www.isni.org/isni/"}]}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{"nameIdentifier":"31","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000050238523","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000050238523"}],"names":[{"name":"藤, 正督","nameLang":"ja"},{"name":"フジ, マサヨシ","nameLang":"ja-Kana"},{"name":"Fuji, Masayoshi","nameLang":"en"}]}]},"item_9_heading_13":{"attribute_name":"見出し","attribute_value_mlt":[{"subitem_heading_banner_headline":"<解説>","subitem_heading_language":"ja"},{"subitem_heading_banner_headline":"<Review>","subitem_heading_language":"en"}]},"item_9_publisher_6":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"名古屋工業大学先進セラミックス研究センター"}]},"item_9_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"21876738","subitem_source_identifier_type":"ISSN"}]},"item_9_source_id_8":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA12617342","subitem_source_identifier_type":"NCID"}]},"item_9_version_type_9":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Li, Jin","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":""}],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Shirai, Takashi","creatorNameLang":"en"},{"creatorName":"白井, 孝","creatorNameLang":"ja"},{"creatorName":"シライ, タカシ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":""}],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"藤, 正督","creatorNameLang":"ja"},{"creatorName":"フジ, マサヨシ","creatorNameLang":"ja-Kana"},{"creatorName":"Fuji, Masayoshi","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-12-07"}],"displaytype":"detail","filename":"arnit2014_5.pdf","filesize":[{"value":"1.0 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/2384/files/arnit2014_5.pdf"},"version_id":"a644aca5-f632-4d07-a0ff-85efbc50d41c"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Silicon Carbide and Its Nanostructures","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Silicon Carbide and Its Nanostructures","subitem_title_language":"en"}]},"item_type_id":"9","owner":"3","path":["419"],"pubdate":{"attribute_name":"公開日","attribute_value":"2016-01-14"},"publish_date":"2016-01-14","publish_status":"0","recid":"2384","relation_version_is_last":true,"title":["Silicon Carbide and Its Nanostructures"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2024-02-08T00:36:44.771855+00:00"}