Characterization of epitaxially grown GaAs on Si substrates with III-V compounds intermediate layers by metalorganic chemical vapor deposition

JAP 57_4578

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JAP 57_4578.pdf

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JAP 57_4578.pdf (341.7 kB) sha256 d65e1339713ac3da0dff567950ce532b3f8751ecb325e54ec549876a32afc67e	Copyright (1985) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 57(10), pp4578-4582 ; 1985 and may be found at http://link.aip.org/link/?jap/57/4578

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