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A threshold current density at 16.5°C and a characteristic temperature T0 of 4.9 kA/cm2 and 179 K respectively have been obtained for the diode on Si substrate.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"familyNames":[{"familyName":"Soga","familyNameLang":"en"},{"familyName":"曾我","familyNameLang":"ja"},{"familyName":"ソガ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Tetsuo","givenNameLang":"en"},{"givenName":"哲夫","givenNameLang":"ja"},{"givenName":"テツオ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"3257","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000020197007 ","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000020197007 "}],"names":[{"name":"Soga, Tetsuo","nameLang":"en"},{"name":"曾我, 哲夫","nameLang":"ja"},{"name":"ソガ, テツオ","nameLang":"ja-Kana"}]},{"nameIdentifiers":[{"nameIdentifier":"4015","nameIdentifierScheme":"WEKO"}],"names":[{"name":"梅野, 正義"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10001_relation_34":{"attribute_name":"item_10001_relation_34","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.96515"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.96515","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA00543432","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Sakai, Shiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4628","nameIdentifierScheme":"WEKO"}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Soga, Tetsuo","creatorNameLang":"en"},{"creatorName":"曾我, 哲夫","creatorNameLang":"ja"},{"creatorName":"ソガ, テツオ","creatorNameLang":"ja-Kana"}],"familyNames":[{"familyName":"Soga","familyNameLang":"en"},{"familyName":"曾我","familyNameLang":"ja"},{"familyName":"ソガ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Tetsuo","givenNameLang":"en"},{"givenName":"哲夫","givenNameLang":"ja"},{"givenName":"テツオ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"3257","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000020197007 ","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000020197007 "}]},{"creatorNames":[{"creatorName":"Takeyasu, Masanari","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"10949","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Umeno, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4015","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"APL 48_413.pdf","filesize":[{"value":"164.2 kB"}],"format":"application/pdf","license_note":"Copyright (1986) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters,48(6),pp.413 - 414; 1986 and may be found at http://link.aip.org/link/?apl/48/413","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/3849/files/APL 48_413.pdf"},"version_id":"13888c29-5037-47e7-a7ac-71bcb5cd3059"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"3849","relation_version_is_last":true,"title":["Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-12T04:19:57.019157+00:00"}