{"created":"2023-05-15T12:35:04.863441+00:00","id":3898,"links":{},"metadata":{"_buckets":{"deposit":"64d8847a-9e81-4874-86dd-162c9b776bf0"},"_deposit":{"created_by":3,"id":"3898","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"3898"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00003898","sets":["31"]},"author_link":["522","11163","11164","11162"],"item_10001_alternative_title_24":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"GaAs 　LSI　ノタメノ　ヒソアツ　インカ　アニール　ギジュツ　：　テンイ　ト　シキイチ　デンアツ　ニ　アタエル　エイキョウ　"},{"subitem_alternative_title":"Annealing technology under arsenic overpressure for GaAs LSI - Influence on dislocation and threshold voltage."}]},"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1987-05-20","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicPageEnd":"618","bibliographicPageStart":"611","bibliographicVolumeNumber":"J70-C","bibliographic_titles":[{"bibliographic_title":"電子情報通信学会論文誌. C, エレクトロニクス"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"GaAs LSIを実現するためには，FETのしきい値電圧（Vth）の微小部分均一性が重要であるという観点から，半絶縁性アンドープLEC GaAs基板中の転位およびVthの微小部分均一性のアニール法依存性を調べることによって，Vthの均一性が何に支配されているかを検討した．高ひ素圧アニールによって，基板表面付近の転位密度が減少し，転位密度分布は均一になる．これは，アニール中に基板表面にひ素圧が供給された効果によるものと考えられる．低ひ素圧アニールでは，Vthは集合転位に対応した部分で負側へ変化し，明確なネットワーク状の分布をもつ．一方，アルシン雰囲気中の高ひ素圧アニールでは，集合転位に対応した部分でのVthの負側への変化は小さくVthは均一に分布する．PCVD SiNx保護膜アニールでは，Vthは転位分布に依存せず非常に均一に分布する．以上の結果より，集合転位の部分には，高濃度のAsGaが存在すること，およびVthの均一性は，転位密度には依存せず，as-grownとアニール後の基板のストイキオメトリーに依存し，As-rich側で均一な分布が得られると考えられる．","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"Egawa, Takashi"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Institute of Electronics, Information and Communication Engineers"}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"09135723","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AN10013378","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"江川, 孝志"},{"creatorName":"エガワ, タカシ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"佐野, 芳明"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"中村, 浩"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"上西, 勝三"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"J70-C_611.pdf","filesize":[{"value":"907.1 kB"}],"format":"application/pdf","license_note":"Copyright (c) 1987 IEICE　http://search.ieice.org/index.html","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/3898/files/J70-C_611.pdf"},"version_id":"247d5f93-cb1b-4500-b80c-a63ac62e6d51"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"GaAs LSIのためのひ素圧印加アニ-ル技術--転移としきい値電圧に与える影響","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"GaAs LSIのためのひ素圧印加アニ-ル技術--転移としきい値電圧に与える影響"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"3898","relation_version_is_last":true,"title":["GaAs LSIのためのひ素圧印加アニ-ル技術--転移としきい値電圧に与える影響"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-16T14:27:17.765874+00:00"}