{"created":"2023-05-15T12:35:05.701979+00:00","id":3918,"links":{},"metadata":{"_buckets":{"deposit":"d0b74615-d15e-40f9-a4ea-30d1302bdf46"},"_deposit":{"created_by":91,"id":"3918","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"3918"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00003918","sets":["31"]},"author_link":["3523","3523","11243"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1987-12-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"18","bibliographicPageEnd":"9702","bibliographicPageStart":"9694","bibliographicVolumeNumber":"36","bibliographic_titles":[{"bibliographic_title":"PHYSICAL REVIEW B","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Relative numbers or statistics of bonds  in III-V quaternary alloy semiconductors of A1-xIIIBxIIIC1-yVDyV type are uniquely determined through a thermodynamical approach in which the cohesive and the strain energies of bonds are taken as the enthalpy in the analysis. The valence-force-field model is used for calculating the strain energy, and the effect of local environment on the bond strain is considered. The analysis is applied to nine different quaternary alloy semiconductors composed of two elements of Al, Ga, or In as the group-III elements and two elements of P, As, or Sb as the group-V elements. The strain energy is a predominant factor in In1-xGaxC1-yVDyV (CV,DV=P,As,Sb), the cohesive energy is a predominant factor in Ga1-xAlxC1-yVDy, and both factors compensate each other almost completely in In1-xAlxC1-yVDyV. The results are interpreted on the basis of the bond-length dependence of each energy.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"3523","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030203110","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030203110"}],"names":[{"name":"市村, 正也"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Physical Society","subitem_publisher_language":"en"}]},"item_10001_relation_34":{"attribute_name":"item_10001_relation_34","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1103/PhysRevB.36.9694"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1103/PhysRevB.36.9694","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0163-1829","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA00362255","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ichimura, Masaya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"3523","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030203110","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030203110"}]},{"creatorNames":[{"creatorName":"Sasaki, Akio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"11243","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"PRB 36_9694.pdf","filesize":[{"value":"1.5 MB"}],"format":"application/pdf","license_note":"(c)1987 The American Physical Society","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/3918/files/PRB 36_9694.pdf"},"version_id":"48a340fe-e062-49fd-b8a8-9073c6a5b317"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Bonds in III-V quaternary alloy semiconductors of A1-xIIIBxIIIC1-yVDyV type","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Bonds in III-V quaternary alloy semiconductors of A1-xIIIBxIIIC1-yVDyV type","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"3918","relation_version_is_last":true,"title":["Bonds in III-V quaternary alloy semiconductors of A1-xIIIBxIIIC1-yVDyV type"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-12T06:17:22.873364+00:00"}