@article{oai:nitech.repo.nii.ac.jp:00003951,
 author = {Kajiyama, Hiroshi and Fukuhara, Akira and Nishino, Yoichi and Muramatsu, Shinichi},
 issue = {3},
 journal = {PHYSICAL REVIEW B},
 month = {Jul},
 note = {In conventional EXAFS (extended  x-ray-absorption fine-structure) analyses, reliable structures are obtained with different values of absorption-edge energy E0 for different neighboring atoms. It is shown in this study that the Ge K-edge EXAFS resulting from the Ge-Ge and Ge-Si bonds in hydrogenated amorphous Si-Ge alloys can be excellently explained by a unique E0 value provided that a newly developed formula based on the spherical wave functions of photoelectrons is employed. The E0 value is just at the steepest point in the experimental edge-jump curve. With the conventional formula the adjusted E0 values for the Ge-Ge and Ge-Si bonds differ by 7 eV at maximum, and in addition they deviate by 3 eV at least from the steepest point., application/pdf},
 pages = {1938--1941},
 title = {Extended x-ray-absorption fine-structure study of hydrogenated amorphous silicon-germanium alloys. I. Analysis based on spherical waves of photoelectrons},
 volume = {38},
 year = {1988}
}