{"created":"2023-05-15T12:35:10.313107+00:00","id":4000,"links":{},"metadata":{"_buckets":{"deposit":"620c09e4-7748-4e1b-aaf0-00aada36de68"},"_deposit":{"created_by":91,"id":"4000","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"4000"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004000","sets":["31"]},"author_link":["3257","4028","4015","11602","3257","4028","4015"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1989-07-31","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicPageEnd":"447","bibliographicPageStart":"445","bibliographicVolumeNumber":"55","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"The nature and behavior of antiphase boundaries in GaAs/Si heterostructures using GaP, GaP IGaAsP, and GaAsP IGaAs strained-layer superlattices as intermediate layers have been studied by transmission electron microscopy. The antiphase domains are found to be very complicated three-dimensional poiygons consisting of several subboundaries in different orientations. Self-annihilation of antiphase domains during crystal growth of GaAs on (001) 0.4° off or (001) 2° off Si substrates is directly observed for the first time through plan-view and cross-sectional observations. Based on these findings, a mechanism of annihilation of these domains is presented.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"familyNames":[{"familyName":"Soga","familyNameLang":"en"},{"familyName":"曾我","familyNameLang":"ja"},{"familyName":"ソガ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Tetsuo","givenNameLang":"en"},{"givenName":"哲夫","givenNameLang":"ja"},{"givenName":"テツオ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"3257","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000020197007 ","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000020197007 "}],"names":[{"name":"Soga, Tetsuo","nameLang":"en"},{"name":"曾我, 哲夫","nameLang":"ja"},{"name":"ソガ, テツオ","nameLang":"ja-Kana"}]},{"nameIdentifiers":[{"nameIdentifier":"4028","nameIdentifierScheme":"WEKO"}],"names":[{"name":"神保, 孝志"}]},{"nameIdentifiers":[{"nameIdentifier":"4015","nameIdentifierScheme":"WEKO"}],"names":[{"name":"梅野, 正義"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10001_relation_34":{"attribute_name":"item_10001_relation_34","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.101870"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.101870","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA00543432","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ueda, O.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"11602","nameIdentifierScheme":"WEKO"}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Soga, Tetsuo","creatorNameLang":"en"},{"creatorName":"曾我, 哲夫","creatorNameLang":"ja"},{"creatorName":"ソガ, テツオ","creatorNameLang":"ja-Kana"}],"familyNames":[{"familyName":"Soga","familyNameLang":"en"},{"familyName":"曾我","familyNameLang":"ja"},{"familyName":"ソガ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Tetsuo","givenNameLang":"en"},{"givenName":"哲夫","givenNameLang":"ja"},{"givenName":"テツオ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"3257","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000020197007 ","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000020197007 "}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4028","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Umeno, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4015","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"APL 55_445.pdf","filesize":[{"value":"497.6 kB"}],"format":"application/pdf","license_note":"Copyright (1989) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 55(5), pp.445-447; 1989 and may be found at http://link.aip.org/link/?apl/55/445","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4000/files/APL 55_445.pdf"},"version_id":"2129ea51-c10f-48ef-a219-31ddb8a01329"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Direct evidence for self-annihilation of antiphase domains in GaAs/Si heterostructures","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Direct evidence for self-annihilation of antiphase domains in GaAs/Si heterostructures","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4000","relation_version_is_last":true,"title":["Direct evidence for self-annihilation of antiphase domains in GaAs/Si heterostructures"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-13T00:38:53.407860+00:00"}